U. Honda

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

U. Honda, Y. Yamada, Y. Tokuda, 2012 .

As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN

M. Hori, T. Kachi, T. Uesugi, 2012 .

Impact of crystal-quality improvement of epitaxial wafers on RF and power switching devices by utilizing VAS-method grown GaN substrates with low-density and uniformly distributed dislocations

T. Mishima, H. Kamogawa, U. Honda, 2013 .

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

U. Honda, Y. Yamada, Y. Tokuda, 2011 .