M. Kanechika

M. Kanechika, Y. Mitsushima, 2000, Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).

Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions

M. Kanechika, Y. Mitsushima, 2004 .

A method to adjust the characteristics of field emission triodes using silicon needles

M. Kanechika, Y. Mitsushima, 2003, IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479).

Study on a condition for forming the high density of silicon needles with high aspect ratio

N. Sugimoto, M. Kanechika, Y. Mitsushima, 2002 .

A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching

N. Sugimoto, M. Kanechika, Y. Mitsushima, 2002 .

Characterization of plasma etching damage on p-type GaN using Schottky diodes

T. Kachi, M. Ichimura, M. Kanechika, 2008 .

Defect Detection in Semiconductor Materials by Luminescence Analysis

T. Kachi, K. Hattori, M. Kanechika, 2019 .

Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN

A. Uedono, M. Kanechika, T. Narita, 2015 .

Characterization of Ar ion etching induced damage for GaN

T. Nonaka, N. Takahashi, M. Kanechika, 2012 .

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes

T. Kimoto, J. Suda, T. Kachi, 2019, Japanese Journal of Applied Physics.

Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)

J. Suda, D. Kikuta, T. Uesugi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Study on leakage current of pn diode on GaN substrate at reverse bias

Tetsu Kachi, Masahiro Sugimoto, Tsutomu Uesugi, 2011 .

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

S. Yamaguchi, J. Suda, J. Kojima, 2021, Applied Physics Express.

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

T. Kimoto, J. Suda, T. Kachi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

T. Kimoto, J. Suda, T. Kachi, 2019, Applied Physics Letters.

Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

J. Suda, T. Uesugi, T. Oka, 2023, Applied Physics Letters.

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

T. Kimoto, J. Suda, T. Kachi, 2018, Applied Physics Letters.

Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

T. Kimoto, J. Suda, T. Kachi, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).