Y. Chiu

Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

E. Chang, Y. Wong, Yen-Teng Ho, 2012, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).

Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric

Kin Leong Pey, Hun-Jan Tao, Da-Yuan Lee, 2010 .

Investigation of ALD or PVD (Ti-rich vs. N-rich) TiN metal gate thermal stability on HfO2 high-K

L. Wu, K. Pey, H. Tao, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

E. Chang, B. Tran, Yen-Teng Ho, 2015, Electronic Materials Letters.

Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

B. Majlis, C. Dee, Yueh-Chin Lin, 2017 .

Growth parameters optimization of GaN high electron mobility transistor structure on silicon carbide substrate

E. Chang, Y. Wong, Y. Chiu, 2014, 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).

Characteristics of high dielectric cubic Gd2O3 thin films deposited on cubic LaAlO3 by pulsed laser deposition

Y. Chiu, L. Hsieh, Shangpan Huang, 2008 .

Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

Y. J. Lee, Kuang-Li Lee, J. Kwo, 2007 .

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Yu-Sheng Chiu, Edward Yi Chang, Hung-Wei Yu, 2014 .

The Circle-Grid Electrode on Concentrated GaAs Solar Cells Efficiency

E. Chang, C. Kuo, H. Yu, 2011 .