T. Luong

发表

Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

E. Chang, Y. Wong, Yen-Teng Ho, 2012, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).

Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

E. Chang, B. Tran, Yen-Teng Ho, 2015, Electronic Materials Letters.

Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2

J. Woo, E. Chang, Yen-Teng Ho, 2018, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure

A. Uedono, A. Franquet, Li Chang, 2020, physica status solidi (a).

Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)

Yueh-Chin Lin, E. Chang, Yen-Teng Ho, 2017, 2017 China Semiconductor Technology International Conference (CSTIC).

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Yueh-Chin Lin, E. Chang, Yen-Teng Ho, 2017 .

Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors

E. Chang, B. Tran, Yen-Teng Ho, 2015 .

Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

D. Tweet, Tingkai Li, E. Chang, 2010 .

Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers

Li Chang, T. Luong, Shane Chang, 2017 .

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

E. Chang, Tingru Wei, B. Tran, 2015, Electronic Materials Letters.

Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

Kun-Ming Chen, G. Huang, E. Chang, 2020, IEEE Transactions on Device and Materials Reliability.

Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Yen-Teng Ho, Y. Tu, Wen‐Hao Chang, 2015 .

Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

Edward Yi Chang, Hung-Wei Yu, Ching-Ting Lee, 2012 .

Wafer size MOS2 with few monolayer synthesized by H2S sulfurization

E. Chang, Yen-Teng Ho, Y. Tu, 2017, 2017 China Semiconductor Technology International Conference (CSTIC).

Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD

Edward Yi Chang, Tien Tung Luong, Yen-Teng Ho, 2017, Microelectron. Reliab..

Post sulfurization effect on the MoS2 grown by pulsed laser deposition

E. Chang, Yen-Teng Ho, Y. Tu, 2016, 2016 China Semiconductor Technology International Conference (CSTIC).

Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

B. Majlis, C. Dee, E. Chang, 2012 .