Y. Yano

发表

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

A. Yamaguchi, A. Ubukata, Y. Yano, 2013 .

High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator

Hiromichi Ohashi, Hajime Okumura, Yoshiki Yano, 2006 .

Effect of threading dislocation in an AlN nucleation layer and vertical leakage current in an AlGaN/GaN high-electron mobility transistor structure on a silicon substrate

T. Egawa, A. Ubukata, Y. Yano, 2019, Semiconductor Science and Technology.

Recess gate AlGaN/GaN HEMTs using overlap gate metal structure

Yoshiki Yano, M. Shimizu, T. Ide, 2010 .

Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool

A. Ubukata, Y. Yano, Hayato Shimamura, 2013 .

Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

Y. Yano, T. Tabuchi, Koh Matsumoto, 2016 .

High Growth Rate MOVPE

A. Yamaguchi, A. Ubukata, Y. Yano, 2010 .

Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

A. Yamaguchi, A. Ubukata, Y. Yano, 2004 .

Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination

N. Okada, K. Tadatomo, Y. Yano, 2019, Japanese Journal of Applied Physics.

Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal

R. F. Karlicek, T. Chow, M. Bulsara, 2019, IEEE Electron Device Letters.

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

T. Egawa, A. Ubukata, Y. Yano, 2014 .

Impact of the AlN nucleation layer on the variation of the vertical‐direction breakdown voltage of AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate

T. Egawa, A. Ubukata, Y. Yano, 2017 .

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

T. Egawa, A. Ubukata, Y. Yano, 2013 .

Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices

A. Ubukata, Y. Yano, T. Tabuchi, 2016 .

Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors

M. Shimizu, H. Okumura, T. Ide, 2007 .

p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors

M. Shimizu, Y. Yano, M. Inada, 2008 .

Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers

T. Chow, C. Wetzel, Y. Yano, 2019 .

High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO/sub 2/ Gate Insulator

Y. Yamamoto, M. Shimizu, H. Okumura, 2005, 2005 International Semiconductor Device Research Symposium.

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy

N. Okada, K. Tadatomo, Y. Yano, 2018 .

Normally‐off operation in AlGaN/GaN/AlGaN double heterojunction field effect transistors

M. Shimizu, H. Okumura, K. Arai, 2007 .

Low on‐resistance AlGaN/GaN HEMTs by reducing gate length and source‐gate length

M. Shimizu, H. Okumura, T. Ide, 2008 .

Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits

R. F. Karlicek, T. Chow, M. Bulsara, 2019, physica status solidi (a).

Integrable Quasi‐Vertical GaN UMOSFETs for Power and Optoelectronic ICs

T. Chow, M. Bulsara, C. Hitchcock, 2019 .

High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

H. Ohashi, M. Shimizu, H. Okumura, 2007 .

Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O

N. Okada, K. Tadatomo, Y. Yano, 2009 .

Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V

Y. Nakano, Kentaroh Watanabe, H. Sodabanlu, 2019, Journal of Crystal Growth.

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Y. Yano, T. Tabuchi, Koh Matsumoto, 2016 .

Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

Hajime Okumura, Yoshiki Yano, Nakao Akutsu, 2007 .

Accelerated GaAs growth through MOVPE for low-cost PV applications

Yoshiaki Nakano, Kentaroh Watanabe, Hassanet Sodabanlu, 2018 .

Performance of InGaN/GaN light-emitting diodes grown using NH3 with oxygen-containing impurities

K. Yamane, N. Okada, K. Tadatomo, 2014 .

MOCVD growth of nitride semiconductors

A. Ubukata, Y. Yano, T. Tabuchi, 2018 .

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate

T. Egawa, A. Ubukata, Y. Yano, 2017 .