Y. Ueno

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

T. Oka, Y. Ueno, T. Ina, 2014 .

Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate

Tohru Oka, Tsutomu Ina, Yukihisa Ueno, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

Tsutomu Ina, Yukihisa Ueno, T. Oka, 2015 .

100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer

Tohru Oka, Tsutomu Ina, Yukihisa Ueno, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).