H. Cui

Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

C. Drowley, A. Edwards, M. Xiao, 2020, IEEE Electron Device Letters.

1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

J. Liu, C. Drowley, A. Edwards, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

C. Drowley, A. Edwards, M. Craven, 2021, IEEE Transactions on Electron Devices.

Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

C. Drowley, A. Edwards, M. Xiao, 2021, IEEE Transactions on Power Electronics.

First-Principles Investigation of Pt-Doped Mote2 for Detecting Characteristic Air Decomposition Components in Air Insulation Switchgear

H. Cui, Tian Wu, Peng Li, 2022, SSRN Electronic Journal.