X. B. Xu

Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise

X. B. Xu, B. Li, Y. Chen, 2020, Semiconductor Science and Technology.

Analysis of trap and recovery characteristics based on low-frequency noise for E-mode GaN HEMTs with p-GaN gate under repetitive short-circuit stress

Y. En, X. B. Xu, B. Li, 2020, Journal of Physics D: Applied Physics.

Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Y. En, X. B. Xu, Y. Chen, 2020, IEEE Journal of the Electron Devices Society.

Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs

Y. En, X. B. Xu, Y. Chen, 2019, 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Y. Huang, X. B. Xu, B. Li, 2021, IEEE Journal of the Electron Devices Society.

Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-silicon capacitor

Y. En, X. Wang, Z. Lei, 2015 .

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

X. B. Xu, Y. Chen, Y. Huang, 2020, IEEE Transactions on Electron Devices.

Effect of Hydrogen on Electrical Properties of Metal-Ferroelectric (SrBi2Ta2O9)–Insulator (HfTaO)–Silicon Capacitor

Y. En, Z. Lei, X. B. Xu, 2015, IEEE Electron Device Letters.

A prognostic circuit for time-dependent dielectric breakdown failure of MOSFET

Y. Q. Chen, Y. D. Lu, S. J. Pan, 2014, 2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS).

Degradation Behavior and Mechanism of SiC Power MOSFETs Under Repetitive Transmission Line Pulse Stress

C. Liu, X. B. Xu, Y. Chen, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics.