Lingli Jiang

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Hongyu Yu, K. Cheng, Binbin Dong, 2016 .

Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs

Hongyu Yu, Guangnan Zhou, Gaiying Yang, 2021, 2102.03418.

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

Hongyu Yu, Guangnan Zhou, Yang Jiang, 2020, IEEE Transactions on Electron Devices.

Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

Hongyu Yu, K. Cheng, Lingli Jiang, 2018, IEEE Transactions on Electron Devices.

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

H. Yu, Ning Wang, Lingli Jiang, 2018 .

Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via transient capacitance measurement

H. Yu, K. Cheng, Binbin Dong, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps

Hongyu Yu, Guangnan Zhou, Gaiying Yang, 2021 .

Overshoot Stress on Ultra-Thin HfO2 High- $\kappa $ Layer and Its Impact on Lifetime Extraction

Hongyu Yu, Huilong Zhu, Chao Zhao, 2015, IEEE Electron Device Letters.

A simulation study of field plate termination in Ga 2 O 3 Schottky barrier diodes

Hongyu Yu, Lingli Jiang, Siqi Lei, 2018, Chinese Physics B.

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Tianli Duan, Fanming Zeng, Lingli Jiang, 2018, Electronics.