B. Feigelson

发表

Vertical GaN Junction Barrier Schottky Diodes

David I. Shahin, K. Hobart, A. Koehler, 2017 .

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2014 .

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

Growth of Bulk GaN Crystals

T. Paskova, B. Feigelson, 2011 .

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

R. Myers-Ward, Jihyun Kim, J. A. Freitas, 2010 .

Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.

P. Klein, C. Eddy, Jihyun Kim, 2011, Optics express.

A study of 13C hyperfine structure in the EPR of nickel-nitrogen-containing centres in diamond and correlation with their optical properties

D. Twitchen, J. Baker, A. Yelisseyev, 1999 .

Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substrates.

C. Eddy, J. Hite, B. Feigelson, 2015, ACS applied materials & interfaces.

Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres

J. Freitas, K. Schmieder, N. Mahadik, 2020, Journal of Physics D: Applied Physics.

Crystal polarity role in Mg incorporation during GaN solution growth

J. Freitas, T. Anderson, B. Feigelson, 2014 .

Growth per cycle of alumina atomic layer deposition on nano- and micro-powders

J. Boercker, J. Wollmershauser, B. Feigelson, 2016 .

Challenges to graphene growth on SiC(0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient

M. V. Rao, Jennifer K. Hite, Charles R. Eddy, 2015 .

Characterization of an Mg‐implanted GaN p–i–n diode

K. Hobart, T. Anderson, J. Greenlee, 2015 .

Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN

Jordan D. Greenlee, Francis J. Kub, Jennifer K. Hite, 2015 .

Process Optimization for Selective Area Doping of GaN by Ion Implantation

M. Goorsky, K. Hobart, T. Anderson, 2021, Journal of Electronic Materials.

Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

E. Beam, J. Xie, K. Hobart, 2018, Journal of Crystal Growth.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

K. Hobart, C. Eddy, T. Anderson, 2014 .

Comparison of AlN encapsulants for high-temperature GaN annealing

K. Hobart, C. Eddy, T. Anderson, 2014 .

Characterization of a selective AlN wet etchant

Jordan D. Greenlee, Francis J. Kub, Andrew D. Koehler, 2015 .

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

T. Anderson, F. Kub, J. Hite, 2019, physica status solidi (a).

Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

K. Hobart, A. Koehler, T. Anderson, 2019, IEEE Transactions on Semiconductor Manufacturing.

Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

Jordan D. Greenlee, K. Hobart, A. Koehler, 2016, Electronic Materials Letters.

Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices

Jordan D. Greenlee, Francis J. Kub, Jennifer K. Hite, 2016, IEEE Transactions on Semiconductor Manufacturing.

(Invited) Vertical GaN Devices Enabled By Selective Area P-Type Doping

Alan G. Jacobs, Francis J. Kub, Travis J Anderson, 2017 .

Polarity dependent implanted p-type dopant activation in GaN

T. Anderson, F. Kub, J. Hite, 2019, Japanese Journal of Applied Physics.

Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing

David I. Shahin, K. Hobart, A. Koehler, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

J. Freitas, P. Klein, J. Greenlee, 2015 .

Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN

K. Hobart, C. Eddy, T. Anderson, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates

M. Wolak, J. Wollmershauser, B. Feigelson, 2020 .

Reply to comments on “An extended hardness limit in bulk nanoceramics”, Acta Materialia 69 (2014) 9–16

J. Tischler, E. Gorzkowski, R. Goswami, 2014 .

Specifics of the distribution of nitrogen defects in synthetic diamonds of cubic habit: IR mapping data

B. Feigelson, I. Babich, Yu. V. Babich, 2010 .

Spatial distribution of the nitrogen defects in synthetic diamond monocrystals: Data of IR mapping

B. Feigelson, Yu. V. Babich, Y. Babich, 2009 .

Mechanisms of nitrogen aggregation in nickel- and cobalt-containing synthetic diamonds

D. Twitchen, J. Baker, A. Yelisseyev, 2000 .

Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

F. Ren, S. Pearton, C. Eddy, 2020 .

Growth mode of alumina atomic layer deposition on nanopowders

J. Wollmershauser, B. Feigelson, K. Manandhar, 2017 .

Reducing the Size of Nanocrystals below the Thermodynamic Size Limit

E. Gorzkowski, R. Goswami, S. Qadri, 2017 .

Distribution of N+ centers in synthetic diamond single crystals

B. Feigelson, Yu. V. Babich, Y. Babich, 2009 .

Local optical spectroscopy of HPHT synthetic diamonds, as grown at 1500°C

D. Fisher, A. Yelisseyev, B. Feigelson, 2001 .

Optical investigation of Ni impurities in diamond

N. Mironova, I. Sildos, A. Yelisseyev, 1998 .

An extended hardness limit in bulk nanoceramics

J. Tischler, E. Gorzkowski, R. Goswami, 2014 .

Transparent nanocrystalline spinel by room temperature high-pressure compaction

Michael P. Hunt, S. Qadri, J. Sanghera, 2013 .

Below the Hall-Petch Limit in Nanocrystalline Ceramics.

K. Wahl, E. Gorzkowski, S. Qadri, 2018, ACS nano.

Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride

M. Fuhrer, S. Hernández, J. Hite, 2017 .

Small-angle X-ray scattering in type Ia diamonds

B. Feigelson, A. Shiryaev, Yu. A. Klyuev, 2000 .

Analysis of the High-Pressure High-Temperature (HPHT) growth of single crystal diamond

J. Derby, J. Friedrich, C. Kranert, 2023, Journal of Crystal Growth.

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

R. Dupuis, K. Hobart, A. Koehler, 2017 .

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

K. Hobart, M. Tadjer, J. Hite, 2023, Crystals.

Effect of HPHT annealing on the photoluminescence of synthetic diamonds grown in the Fe–Ni–C system

J. Baker, I. Sildos, A. Yelisseyev, 2003 .

Spectroscopic study of HPHT synthetic diamonds, as grown at 1500°C

D. Fisher, A. Yelisseyev, B. Feigelson, 2002 .

Spatial distribution of impurity defects in synthetic diamonds obtained by the BARS technology

S. Terentyev, A. Yelisseyev, B. Feigelson, 1996 .

Linear growth rate and sectorial growth dynamics of diamond crystals grown by the temperature-gradient techniques (Fe–Ni–C system)

B. Feigelson, A. Chepurov, Y. Babich, 2016, Geochemistry International.

The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds

D. Fisher, J. Baker, A. Yelisseyev, 2000 .

Relationship between electronic states of nickel-containing centres and donor nitrogen in synthetic and natural diamonds

B. Meyer, A. Yelisseyev, B. Feigelson, 1998 .

Growth Rate Effect on Nitrogen Aggregation in Synthetic Diamonds: Analysis of C- and A-Defect Distributions

B. Feigelson, A. Turkin, N. Surkov, 2002 .

Nitrogen incorporation in octahedral diamonds grown in the Fe-Ni-C system

A. Yelisseyev, B. Feigelson, A. Chepurov, 2012, Geochemistry International.

Manifestation of nitrogen interstitials in synthetic diamonds obtained using a temperature gradient technique (Fe–Ni–C system)

B. Feigelson, A. Chepurov, Y. Babich, 2016, Geochemistry International.

Efficient Incorporation of Mg in Solution Grown GaN Crystals

T. Anderson, B. Feigelson, Jaime A. Freitas, Jr., 2013 .

Stability Limits of Pressure Densified Polycarbonate Glass

M. Tyagi, D. Fragiadakis, C. Roland, 2019, Macromolecules.

Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices

C. Li, M. Goorsky, K. Hobart, 2019, ECS Journal of Solid State Science and Technology.

Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

Jordan D. Greenlee, J. Freitas, K. Hobart, 2016 .

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

M. Abraham, C. Eddy, T. Anderson, 2012 .

A new approach to investigation of nickel defect transformation in the HPHT synthetic diamonds using local optical spectroscopy

A. Yelisseyev, B. Feigelson, J. Steeds, 2006 .

(Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN

K. Hobart, T. Anderson, J. Greenlee, 2015 .

Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

Jordan D. Greenlee, Fritz J. Kub, Jennifer K. Hite, 2016 .

Electrically defined topological interface states of graphene surface plasmons based on a gate-tunable quantum Bragg grating

Jeffery W. Allen, G. Shvets, M. Shcherbakov, 2019, Nanophotonics.

Comparison of AlN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing

Jordan D. Greenlee, K. Hobart, V. Wheeler, 2015 .

Positron Annihilation in Diamond

H. Schut, B. Feigelson, K. Iakoubovskii, 2001 .

Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient

R. Henry, B. Feigelson, R. L. Henry, 2005 .

Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates.

V. Wheeler, S. Hernández, J. Hite, 2015, Nanoscale.

GaN single crystals of different habit grown from solution at near atmospheric pressure

P. Klein, J. A. Freitas, J. Tischler, 2010 .

III-Nitride crystal growth from nitride-salt solution

Mark E. Twigg, R. M. Frazier, M. Twigg, 2007 .

Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates.

V. Wheeler, S. Hernández, J. Hite, 2015, Nanoscale.

Electrical and optical characterization of GaN micro-wires

C. Eddy, J. Hite, M. Mastro, 2011 .

Growth and characterization of III-N bulk crystals

R. M. Frazier, M. Twigg, J. A. Freitas, 2008 .

Truly Nanostructured Transparent Ceramics – New Properties and Opportunities

J. Wollmershauser, B. Feigelson, 2013 .

Small-angle X-ray scattering of extended defects in diamonds

B. Feigelson, A. Shiryaev, K. A. Dembo, 2003 .

Nanostructural Effects Beyond Hall-Petch: Towards Superhard Tungsten Carbide

M. Aindow, J. Wollmershauser, B. Feigelson, 2024, Acta Materialia.

Optical probing of low-pressure solution grown GaN crystal properties

J. A. Freitas, J. Tischler, B. Feigelson, 2010 .