P. Ivo

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

J. Croon, M. Meneghini, G. Meneghesso, 2014, IEEE Transactions on Electron Devices.

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Christian Boit, Joachim Wurfl, Arkadiusz Glowacki, 2009, 2009 IEEE International Reliability Physics Symposium.

Reliability issues of GaN based high voltage power devices

Frank Brunner, Matthias Schulz, Joachim Würfl, 2011, Microelectron. Reliab..

Types of degradation modes of AlGaN/GaN high electron mobility transistors (HEMTs) in dependenc on epitaxial design and buffer quality

P. Ivo, 2015, 2015 International Conference on Quality in Research (QiR).

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012, Microelectronics and reliability.

AlGaN/GaN HEMTs Reliability: Degradation Modes and Analysis

P. Ivo, 2012 .

GaN-HEMTs devices with single- and double-heterostructure for power switching applications

Eldad Bahat Treidel, M. Meneghini, G. Meneghesso, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Christian Boit, Günther Tränkle, Joachim Würfl, 2011, Microelectron. Reliab..