Zhichao Yang

Hafnium-based High-k Gate Dielectrics

P. Chu, A. Huang, Zhichao Yang, 2010 .

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

S. Rajan, S. Krishnamoorthy, F. Akyol, 2017, IEEE Transactions on Electron Devices.

III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA)

J. Khurgin, S. Rajan, S. Krishnamoorthy, 2019, High-Frequency GaN Electronic Devices.

Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter

J. Khurgin, S. Rajan, S. Krishnamoorthy, 2016, 2016 74th Annual Device Research Conference (DRC).

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

S. Rajan, P. Park, N. Padture, 2013, 1301.1952.

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

J. Khurgin, S. Rajan, Yuewei Zhang, 2015 .

Hafnium-based High-k Gate Dielectrics

P. Chu, A. Huang, Zhichao Yang, 2010 .

Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors

J. Khurgin, S. Rajan, Yuewei Zhang, 2015, IEEE Electron Device Letters.