E. Ishida

Shallow junction doping technologies for ULSI

E. E. Jones, E. Ishida, 1998 .

The effect of implant dose rates and two step anneals on p/sup +/-n ultra-shallow junctions

S. Banerjee, S. Banerjee, E. Ishida, 1995, Proceedings of the Eleventh Biennial University/Government/ Industry Microelectronics Symposium.

The dependence of ultrashallow junction depths on impact dose rates

S. Banerjee, E. Ishida, L. Larson, 1995 .

Effect of fluorine on the diffusion of boron in ion implanted Si

Kevin S. Jones, Emi Ishida, Daniel F. Downey, 1998 .

Eleventh Biennial University/ Government/Industry Microelectronics Symposium

E. Ishida, L. Larson, M. Craig, 1995, Proceedings of the Eleventh Biennial University/Government/ Industry Microelectronics Symposium.

Dose rate and thermal budget optimization for ultrashallow junctions formed by low‐energy (2–5 keV) ion implantation

S. Banerjee, E. Ishida, A. Sultan, 1996 .

Impurity distribution and electrical characteristics of boron-doped Si1−xGex/Si p+/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

P. Carey, S. Talwar, E. Ishida, 1993 .

Fabrication and characterization of selectively grown Si1-xGex/Si p+/n heterojunctions using pulsed laser induced epitaxy and gas immersion laser doping

S. Talwar, E. Ishida, K. Weiner, 1993 .

Materials properties of B-doped Si by low energy plasma source ion implantation

R. Matyi, D. Brunco, E. Ishida, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.