Yanwei Zhang

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

S. Zou, Huixiang Huang, Zhengxuan Zhang, 2013, IEEE Transactions on Nuclear Science.

Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step ${\hbox {Si}}^ + $ Implantation

Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, 2014, IEEE Transactions on Nuclear Science.

Novel Si ion implantation technique for improving the radiation hardness of SOI pseudo-MOS transistor

M. Tang, Huixiang Huang, Zhengxuan Zhang, 2014 .

Investigation of unique total ionizing dose effects in 0.2 µm partially-depleted silicon-on-insulator technology

M. Tang, Huixiang Huang, Zhengxuan Zhang, 2013, 1307.0327.

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 μm Partially-Depleted Silicon-on-Insulator Technology

Huixiang Huang, Zhengxuan Zhang, Dawei Bi, 2013 .