Y. Chen

The study of leakage current performance improvement in high voltage technology

C. Ni, M. H. Chen, R. H. Liu, 2012, 2012 SEMI Advanced Semiconductor Manufacturing Conference.

The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Alexander A. Balandin, Valentin O. Turin, K. L. Wang, 2004 .

An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

Y. Chen, S.C. Martin, R. Smith, 1999, IEEE Electron Device Letters.

The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

J. Chyi, C. H. Chen, Y. Hsin, 2014 .

Capacitance-Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors

Alexander A. Balandin, Kang L. Wang, A. Balandin, 2006 .

An Al Ga N/GaN Undoped Channel Heterostructure Field Effect Transistor with of 107 GHz

R. Smith, K. Boutros, J. Redwing, 1999 .

High performance AlGaN/GaN HEMT with improved ohmic contacts

Y. L. Chen, Kang L. Wang, S. Thomas, 1998 .