L. Chan

发表

Effect of tensile stress on the various components of the off current of n-channel metal-oxide-semiconductor transistors

C. H. Loh, S. Siah, Peizhen Yang, 2007 .

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

Peizhen Yang, L. Chan, S. W. Lai, 2010 .

An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory

W. S. Lau, Y. Liu, S. Y. Siah, 2008, Microelectron. Reliab..

Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation

S. Siah, Peizhen Yang, W. Lau, 2010 .

Effects of switching from (1 1 0) to (1 0 0) channel orientation and tensile stress on n-channel and p-channel metal-oxide-semiconductor transistors

S. Siah, Peizhen Yang, W. Lau, 2010 .

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

J. P. Liu, E. Chor, L. Chan, 2003 .

Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

S. Siah, Peizhen Yang, W. Lau, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

A mechanism of increase in the on-current and offcurrent due to a slightly smaller spacer in state-of- the-art p-channel MOS transistors during manufacturing

Y. Kim, M. Lal, S. Siah, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

Oxidation behaviour of Cu thin films on Si wafer at 175–400°C

H. Gong, Wei Gao, Shaozhou Li, 2001 .

Comparison of latchup immunity for silicided source/drain at different n+ implant energy

L. Chan, L.K. Chew, L. Chen, 1997, 1997 IEEE Hong Kong Proceedings Electron Devices Meeting.

Study of copper silicide retardation effects on copper diffusion in silicon

A. See, A. Wee, H. Gong, 2001 .

Reduced boron lateral ion channeling in very short p-channel transistors by switching from ⟨110⟩ to ⟨100⟩ channel orientation

S. Siah, Peizhen Yang, W. Lau, 2008 .

High-k gate stack on germanium substrate with fluorine incorporation

Mingbin Yu, Chunxiang Zhu, Chunxiang Zhu, 2008 .

Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology

W. S. Lau, Elgin Quek, Hyung-Rock Kim, 2008, Microelectron. Reliab..

SURFACE SMOOTHING OF FLOATING GATES IN FLASH MEMORY DEVICES VIA SURFACE NITROGEN AND CARBON INCORPORATION

H. Gong, C. Cha, E. Chor, 1999 .

Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

W. S. Li, A. See, Y. Leung, 2002 .

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon

E. Chor, L. Chan, Hyeokjae Lee, 2006 .

Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique

H. Gong, C. Cha, E. Chor, 1998 .

Superior latch-up resistance of high dose, high energy implanted p/sup +/ buried layers

L. Chan, W. Morris, L. Chan, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage

H. Gong, C. Cha, E. Chor, 1999, International Symposium on Plasma Process-Induced Damage.