H. Gottlob

发表

Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics

H. Kurz, M. Lemme, T. Echtermeyer, 2006 .

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

H.J. Osten, O. Buiu, B. Raeissi, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Leakage Current Mechanisms in Epitaxial Gd2O3 High-k Gate Dielectrics

H. Kurz, Michael Schmidt, M. Lemme, 2008 .

Stability of crystalline Gd2O3 thin films on silicon during post-growth processing

H. Osten, E. Bugiel, D. Tetzlaff, 2009, 2009 3rd International Conference on Signals, Circuits and Systems (SCS).

Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

H. Osten, E. Bugiel, M. Lemme, 2008 .

Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors

P. Hurley, S. Monaghan, K. Cherkaoui, 2009 .

Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm

H. Kurz, Michael Schmidt, M. Lemme, 2006 .

Gentle FUSI NiSi metal gate process for high-k dielectric screening

P. Hurley, H. Kurz, K. Cherkaoui, 2008 .

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

P. Hurley, Y. Gomeniuk, J. Schubert, 2011 .

Tungsten work function engineering for dual metal gate nano-CMOS

J. K. Efavi, Max C. Lemme, Heinrich Kurz, 2005 .

Nickel-silicide process for ultra-thin-body SOI-MOSFETs

H. Kurz, S. Cristoloveanu, Michael Schmidt, 2005 .

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

J. K. Efavi, Max C. Lemme, Michael Schmidt, 2006 .

Highly selective etch process for silicon-on-insulator nano-devices

H. Kurz, Y. Georgiev, M. Lemme, 2005 .

Nanoscale TiN metal gate technology for CMOS integration

H. Kurz, Michael Schmidt, M. Lemme, 2006 .

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Max C. Lemme, Steve Hall, Octavian Buiu, 2007 .

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

H. J. Osten, H. Kurz, E. Bugiel, 2006, IEEE Electron Device Letters.

Mobility extraction in SOI MOSFETs with sub 1 nm body thickness

L. Selmi, H. Kurz, F. Driussi, 2009 .

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

Max C. Lemme, Steve Hall, Octavian Buiu, 2008 .

Highly selective HBr etch process for fabrication of triple-gate nano-scale SOI-MOSFETs

J. K. Efavi, Max C. Lemme, Heinrich Kurz, 2004 .

Metal gate electrodes for rare earth oxide high-k dielectrics

H. Kurz, M. Schmidt, H. Gottlob, 2009, 2009 3rd International Conference on Signals, Circuits and Systems (SCS).

Complementary metal oxide semiconductor integration of epitaxial Gd2O3

Max C. Lemme, Udo Schwalke, Michael Schmidt, 2009 .