U. Lambert

发表

Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization

O. Breitenstein, D. Dantz, F. Altmann, 2001 .

A method for localization and determination of the local density of defects in the gate oxide MIS capacitors

O. Breitenstein, J. Vanhellemont, A. Huber, 1998 .

Characterization of Crystal Quality by Crystal Originated Particle Delineation and the Impact on the Silicon Wafer Surface

W. Ammon, D. Gräf, U. Lambert, 1998 .

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

H. Richter, J. Vanhellemont, D. Gräf, 1998 .

Chemical interactions in GaAs‐LEC crystal growth

U. Wiese, U. Lambert, 1991 .

A Method for Studying the Grown‐In Defect Density Spectra in Czochralski Silicon Wafers

H. Richter, D. Gräf, U. Lambert, 1997 .

Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon

J. Vanhellemont, A. Huber, U. Lambert, 1999 .

Influence of pyrolytic boron nitride crucibles on GaAs crystal growth process and crystal properties

U. Lambert, L. Fischer, H. Rüfer, 1995 .

Advanced arsenic purification and GaAs synthesis for improved reproducible growth of undoped semi-insulating GaAs

U. Lambert, E. Tomzig, H. Immenroth, 1994 .

Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

D. Gräf, U. Lambert, A. Ehlert, 1995 .

Key influence of the thermal history on process-induced defects in Czochralski silicon wafers

T. Grabolla, D. Gräf, U. Lambert, 1997 .

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

D. Gräf, U. Lambert, A. Ehlert, 1996 .

Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si

H. Richter, J. Vanhellemont, E. Dornberger, 1998 .

Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing

H. Richter, J. Vanhellemont, W. Ammon, 1999 .

Can Si(113) wafers be an alternative to Si(001)

K. Ehwald, P. Gaworzewski, J. Dabrowski, 2001 .

Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography

Otwin Breitenstein, A. Huber, O. Breitenstein, 2000 .

Measurement, modelling and simulation of defects in as-grown Czochralski silicon

S. Senkader, J. Vanhellemont, D. Gräf, 1997 .

On the Impact of Grown-in Silicon Oxide Precipitate Nuclei on Silicon Gate Oxide Integrity

J. Vanhellemont, D. Gräf, M. Depas, 1996 .

Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

W. Ammon, E. Dornberger, D. Gräf, 1997 .

Upper yield point of large diameter silicon

Harald H. Richter, Reinhold Wahlich, G. Obermeier, 2001 .