X. Wang

Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime

D. Kwong, Y. Yeo, Ming-Fu Li, 2004 .

Self-organized hybrid nanostructures composed of the array of vertically aligned carbon nanotubes and planar graphite layer

B. Tay, V. Galperin, Y. Shaman, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

Physical and electrical characteristics of high-κ gate dielectric Hf(1−x)LaxOy

D. Kwong, A. Chin, Chunxiang Zhu, 2006 .

Some issues in advanced CMOS gate stack performance and reliability

Ming-Fu Li, C. Shen, Chunxiang Zhu, 2011 .

NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric

Y. Yeo, Ming-Fu Li, C. Shen, 2007, IEEE Electron Device Letters.

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n-channel metal-oxide-semiconductor field-effect transistors

D. Kwong, Y. Yeo, N. Balasubramanian, 2005 .