J. Ushio

发表

Electric-field dependence of negative-bias temperature instability

J. Ushio, Y. Okuyama, T. Maruizumi, 2005 .

Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces

J. Ushio, T. Maruizumi, K. Kushida-Abdelghafar, 2002 .

Chemisorption of formate and acetate on cluster models of Rh and bimetallic RhSn clusters

Dennis R. Salahub, Jiro Ushio, D. Salahub, 1993 .

Effect of nitrogen at SiO2/Si interface on reliability issues—negative-bias-temperature instability and Fowler–Nordheim-stress degradation

Eiichi Murakami, Jiro Ushio, E. Murakami, 2002 .

An atomic model of the nitrous-oxide-nitrided SiO2/Si interface

Y. Kamigaki, J. Ushio, K. Kushida-Abdelghafar, 2002 .

Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field

M. Miyao, J. Ushio, T. Maruizumi, 2000 .

Investigation of a model for the segregation and pile-up of boron at the SiO/sub 2//Si interface during the formation of ultrashallow p/sup +/ junctions

N. Natsuaki, J. Oh, M. Oshima, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Improvement of silicon dioxide integrity against hole-related breakdown with the incorporation of foreign atoms: molecular orbital examination

M. Miyao, J. Ushio, T. Maruizumi, 1998, ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132).

Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

Y. Shiraki, K. Sawano, J. Ushio, 2013 .

Ultraviolet-Curing Mechanism of Porous-SiOC

S. Nakao, Manabu Kato, T. Ohno, 2007 .

Molecular orbital theory examination into improved gate oxide integrity through the incorporation of nitrogen and fluorine

M. Miyao, J. Ushio, T. Maruizumi, 1999 .

Structures and Properties of an Ultra-Low- k Material: Classical-molecular-dynamics and First-principles Calculations

S. Nakao, Manabu Kato, T. Ohno, 2006 .

UV/EB Cure Mechanism for Porous PECVD/SOD Low-k SiCOH Materials

S. Kondo, J. Ushio, T. Hamada, 2006, 2006 International Interconnect Technology Conference.

Electronic structure of dirhodium tetracarboxylate complexes by the AB initio SCF MO method

H. Nakatsuji, J. Ushio, T. Yonezawa, 1981 .

Electronic structures and reactivities of metal-carbon multiple bonds; Schrock-type metal carbene and metal carbyne complexes

H. Nakatsuji, J. Ushio, T. Yonezawa, 1984 .

Ab initio electronic structure of the rhodium-rhodium bond in dirhodium tetracarboxylate complexes and their cations

H. Nakatsuji, J. Ushio, T. Yonezawa, 1983 .

Chemistry of organosilicon compounds. 282. Ab initio MO study of the reaction of pentacoordinate allylsilicates with aldehydes.

Kazuhiko Sato, M. Hada, J. Ushio, 1991 .

Does a silylene-metal complex exist?

H. Nakatsuji, J. Ushio, T. Yonezawa, 1983 .

High coordinate germanium and tin complexes in the allylation reactions of aldehydes

H. Nakatsuji, H. Yokono, M. Hada, 1993 .

Density Functional Description of Metal-Metal and Metal-Ligand Bonds

D. Salahub, C. Jamorski, N. Russo, 1994 .

An initio electronic structures and reactivities of metal carbene complexes; Fischer-type compounds (CO)5Cr=CH(OH) and (CO)4Fe=CH(OH)

H. Nakatsuji, J. Ushio, T. Yonezawa, 1983 .

Vibrational analysis of formate adsorbed on Ni(110) : LCGTO-MCP-LSD study

D. Salahub, I. Pápai, J. Ushio, 1992 .

Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals

T. Ohmi, T. Hattori, H. Nohira, 2008 .

Optimal design of coating material for nanoparticles and its application for low-temperature interconnection

Yusuke Yasuda, Eiichi Ide, Jiro Ushio, 2010 .

Surface segregation behavior of B, Ga, and Sb during Si MBE: Calculations using a first-principles method

K. Nakagawa, M. Miyao, J. Ushio, 1998 .

Surface segregation behavior of Ge in comparison with B, Ga, and Sb: calculations using a first-principles method

K. Nakagawa, M. Miyao, J. Ushio, 1999 .

The role of hydrogen migration in negative-bias temperature instability

J. Ushio, T. Maruizumi, K. Kushida-Abdelghafar, 2003 .

Gaussian-based density functional methodology, software, and applications

Dennis R. Salahub, René Fournier, Alain St. Amant, 1991 .

Stable non-cyanide electroless gold plating which is applicable to manufacturing of fine pattern printed wiring boards

Hiroshi Yamamoto, Takeshi Shimazaki, Takashi Inoue, 1995, 1995 Proceedings. 45th Electronic Components and Technology Conference.

Calculation of hopping-conduction energy of holes in SiO2 based on molecular orbital theory

M. Miyao, J. Ushio, T. Maruizumi, 1999 .

A model for the segregation and pileup of boron at the SiO2/Si interface during the formation of ultrashallow p+ junctions

Masaharu Oshima, Kanta Ono, Akio Shima, 2001 .

Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction

Masanobu Miyao, Jiro Ushio, Takuya Maruizumi, 1999 .

Interface structures generated by negative-bias temperature instability in Si/SiO/sub 2/ and Si/SiO/sub x/N/sub y/ interfaces

J. Ushio, T. Maruizumi, K. Kushida-Abdelghafar, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).