K. Tabuchi

A strategy using a copper/low-k BEOL process to prevent negative-bias temperature instability (NBTI) in p-MOSFETs with ultra-thin gate oxide

S. Kadomura, A. Suzuki, K. Tabuchi, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Effect of Plasma Treatment and Dielectric Diffusion Barrier on Electromigration Performance of Copper Damascene Interconnects

Hideki Shibata, Hideshi Miyajima, Takamasa Usui, 2006 .

Identification of electromigration dominant diffusion path for Cu damascene interconnects and effect of plasma treatment and barrier dielectrics on electromigration performance

H. Shibata, T. Hasegawa, H. Shibata, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.