C. H. Liu

Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs

Zhijian Yang, T. Hook, C. Wann, 2002 .

ESD protection for the tolerant I/O circuits using PESD implantation

Mu-Chun Wang, Howard Tang, C. H. Liu, 2002 .

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

J. H. Kim, R. Grondin, Julian J. Sanchez, 1999 .

A breakdown model and lifetime projection for thin gate oxide MOS devices

R. Grondin, Julian J. Sanchez, T. DeMassa, 1997, Proceedings of the UGIM Symposium, Microelectronics Education for the Future. Twelfth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.97CH36030).

Negative bias temperature instability (NBTI) in deep sub-micron p/sup +/-gate pMOSFETs

C. Chou, W.C. Chang, K. Fu, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism

Shou-Kong Fan, Ting-Kuo Kang, Ming-Jer Chen, 2001 .

Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown

Ting-Kuo Kang, Ming-Jer Chen, K. Fu, 2001 .

Surface plasmons and breakdown in thin silicon dioxide films on silicon

David J. Smith, K. Weiss, T. DeMassa, 1998 .

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

K. C. Lin, C. H. Liu, P. C. Juan, 2015, Microelectron. Reliab..

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

H. W. Chen, C. H. Liu, H. Hsu, 2011, The 4th IEEE International NanoElectronics Conference.