H. Lim

Improvement of NBTI and electrical characteristics by ozone pre-treatment and PBTI issues in HfAlO(N) high-k gate dielectrics

Seong-Geon Park, C. Hwang, Jong-Ho Lee, 2003, IEEE International Electron Devices Meeting 2003.

Investigation on spatially separated atomic layer deposition by gas flow simulation and depositing Al2O3 films

C. Hwang, H. Kim, Seok-jun Won, 2012 .

Analysis of stresses in Ru thin films prepared by chemical vapor deposition

C. Hwang, H. Kim, H. Lim, 2003 .

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

C. Hwang, H. Kim, J. H. Lee, 2014, ACS applied materials & interfaces.

Fermi-level unpinning in Pt/Al2O3/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces

Jae Kyeong Jeong, H. Kim, Sijung Yoo, 2016 .

Metallorganic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl-Propylcyclopentadienylruthenium(II) and Oxygen

Cheol Seong Hwang, H. J. Kim, C. Hwang, 2002 .

Fabrication of HfO2 Thin-Film Capacitors with a Polycrystalline Si Gate Electrode and a Low Interface Trap Density

C. Hwang, Jong-Ho Lee, Jaehoon Park, 2005 .

Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

H. Hwang, Y. Son, H. Lim, 2005 .

Reduction in the Interfacial Trap Density of Al2O3/GaAs Gate Stack by Adopting High Pressure Oxidation

Jae Kyeong Jeong, N. Lee, H. Kim, 2014 .

A highly manufacturable MIPS (metal inserted poly-Si stack) technology with novel threshold voltage control

Jong-Ho Lee, Hag-Ju Cho, Nae-In Lee, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..