W. Wong

On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric

Ming-Fu Li, C. Shen, W.J. Liu, 2007, 2007 IEEE International Electron Devices Meeting.

Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

Xiaohui Liu, R. Han, Jinfeng Kang, 2009 .

Correlation between hot-carrier-induced interface states and GIDL current increase in n-MOSFET's

P. T. Lai, H. B. Lo, P. Lai, 1998 .

Investigations of NBTI by conventional and new measurement methods for p-MOSFETs

Ming-Fu Li, D. Huang, W.J. Liu, 2008, 2008 2nd IEEE International Nanoelectronics Conference.