G. Paulzen

Three hot-carrier degradation mechanisms in deep-submicron PMOSFET's

H. Lifka, P. Woerlee, R. Woltjer, 1995 .

A half-micron CMOS technology using ultra-thin silicon on insulator

P.H. Woerlee, H. Lifka, P. Sheridan, 1990, International Technical Digest on Electron Devices.

Lightly N/sub 2/O nitrided dielectrics grown in a conventional furnace for E/sup 2/PROM and 0.25 /spl mu/m CMOS

H. Lifka, P. Woerlee, R. Woltjer, 1993, Proceedings of IEEE International Electron Devices Meeting.

N/sub 2/O nitrided gate dielectric technology for 0.25 mu m CMOS

H. Lifka, P. Woerlee, R. Woltjer, 1993, 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.

Qbd− dependencies of ultrathin gate oxides on large area capacitors

G. Paulzen, G. M. Paulzen, 1997 .

The impact of scaling on hot-carrier degradation and supply voltage of deep-submicron NMOS transistors

H. Lifka, R. Woltjer, G. Streutker, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Improved prediction of interface-trap generation in NMOST's

R. Woltjer, G.M. Paulzen, R. Woltjer, 1994, IEEE Electron Device Letters.

Universal description of hot-carrier-induced interface states in NMOSFETs

R. Woltjer, R. Woltjer, G. Paulzen, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Positive oxide-charge generation during 0.25 /spl mu/m PMOSFET hot-carrier degradation

H. Lifka, P. Woerlee, R. Woltjer, 1994, IEEE Electron Device Letters.

A novel high-density low-cost diode programmable read only memory

P.W.H. de Vreede, H. Lifka, P.H. Woerlee, 1996, International Electron Devices Meeting. Technical Digest.