H. Pomp

Three hot-carrier degradation mechanisms in deep-submicron PMOSFET's

H. Lifka, P. Woerlee, R. Woltjer, 1995 .

Lightly N/sub 2/O nitrided dielectrics grown in a conventional furnace for E/sup 2/PROM and 0.25 /spl mu/m CMOS

H. Lifka, P. Woerlee, R. Woltjer, 1993, Proceedings of IEEE International Electron Devices Meeting.

N/sub 2/O nitrided gate dielectric technology for 0.25 mu m CMOS

H. Lifka, P. Woerlee, R. Woltjer, 1993, 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.

Nitrogen and oxygen incorporation during rapid thermal processing of Si in N2O

H. G. Pomp, Antonius Emilius Theodorus Kuiper, F. Habraken, 1992 .

The impact of scaling on hot-carrier degradation and supply voltage of deep-submicron NMOS transistors

H. Lifka, R. Woltjer, G. Streutker, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Shallow boron junctions and preamorphization for deep submicron silicon technology

N. Cowern, P. Woerlee, A. Walker, 1993 .