G. Barletta

Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs

A. Tallarico, C. Fiegna, E. Sangiorgi, 2014, IEEE Transactions on Device and Materials Reliability.

Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide

Paolo Magnone, Claudio Fiegna, Pier Andrea Traverso, 2013 .

Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs

A. Tallarico, C. Fiegna, E. Sangiorgi, 2015 .

NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms

A. Tallarico, C. Fiegna, E. Sangiorgi, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs

A. Tallarico, C. Fiegna, E. Sangiorgi, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Electrical overstress effect characterization on Power MOS Trenchfet and correlation with time dependent dielectric breakdown

S. Patané, G. Barletta, G. Franco, 2021, Microelectronics Reliability.

Preliminary test of a large electrochromic window

F. Simone, A Pennisi, M. Lanza, 1999 .

Understanding negative bias temperature stress in p-channel trench-gate power MOSFETs by low-frequency noise measurement

C. Fiegna, E. Sangiorgi, P. Traverso, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Experimental characterization of low-frequency noise in power MOSFETs for defectiveness modelling and technology assessment

Paolo Magnone, Claudio Fiegna, Pier Andrea Traverso, 2014 .