K. Nagamatsu

发表

Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

K. Yamanaka, T. Onishi, O. Imafuji, 2012, IEEE Journal of Quantum Electronics.

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

M. Boćkowski, H. Amano, A. Tanaka, 2019, AIP Advances.

m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates

H. Amano, A. Tanaka, S. Nitta, 2018 .

Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE

H. Amano, S. Nitta, K. Nagamatsu, 2017 .

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

H. Amano, Y. Sugawara, Y. Ishikawa, 2018 .

Effect of V/III ratio on the surface morphology and electrical properties of m –plane (101¯0) GaN homoepitaxial layers

H. Amano, S. Bae, S. Nitta, 2017 .

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

Hole-blocking crystalline-silicon/titanium-oxide heterojunction with very low interface recombination velocity

J. Sturm, A. Kahn, S. Avasthi, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

CYCLOADDITION REACTIONS OF 1-AZA- AND 1,3-DIAZAAZULENIUM 1-METHYLIDES †

K. Nagamatsu, Hiroyuki Fujii, N. Abe, 2006 .

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

H. Amano, Ho‐Jun Lee, M. Pristovsek, 2018 .

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

H. Amano, M. Pristovsek, S. Nitta, 2018 .

Double-heterojunction crystalline silicon solar cell fabricated at 250°C with 12.9 % efficiency

J. Sturm, S. Wagner, A. Kahn, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Low-Temperature Synthesis of a TiO2/Si Heterojunction.

J. Sturm, S. Wagner, Y. Chabal, 2015, Journal of the American Chemical Society.

Integrated laser processed silver nanowire transparent electrodes with organic electronic devices

Joshua A. Spechler, J. Sturm, C. Arnold, 2013, CLEO: 2013.

Poly(1,4-phenylene sulfide) (PPS) Synthesis via Oxidative Polymerization of Diphenyl Disulfide: Mechanistic Insight into the Selective Formation of 1,4-Thiophenylene Chain

K. Oyaizu, H. Nishide, K. Nagamatsu, 2015 .

The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer

H. Amano, Ho‐Jun Lee, S. Miyazaki, 2015 .

Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy

H. Hirayama, Y. Takashima, Y. Naoi, 2022, Scientific Reports.

High Temperature MOVPE Growth of Al x Ga 1−x N (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

H. Amano, S. Nitta, K. Nagamatsu, 2017 .

High‐output‐power AlGaN/GaN ultraviolet‐light‐emitting diodes by activation of Mg‐doped p‐type AlGaN in oxygen ambient

S. Kamiyama, H. Amano, I. Akasaki, 2010 .

Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN

Xiaotong Liu, H. Miyake, K. Nagamatsu, 2019, Japanese Journal of Applied Physics.

Defects in highly Mg‐doped AlN

S. Kamiyama, H. Amano, I. Akasaki, 2010 .

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

The reaction of 〔(1-azaazulen-2-yl)imino〕phosphorane with arylaldehydes: formation of bis〔(1-azaazulen-2-yl)amino〕arylmethanes

K. Nagamatsu, T. Gunji, T. Murafuji, 2010 .

Enhanced catalytic activity of oxovanadium complexes in oxidative polymerization of diphenyl disulfide

K. Oyaizu, H. Nishide, K. Nagamatsu, 2016 .

High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy

H. Hirayama, Y. Takashima, Y. Naoi, 2023, Scientific Reports.

Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes

A. Tanaka, H. Amano, S. Nitta, 2017 .

Crystalline silicon photovoltaics via low-temperature TiO 2/Si and PEDOT/Si heterojunctions

K. Nagamatsu, 2016 .

Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2008 .

Crystal growth and p‐type conductivity control of AlGaN for high‐efficiency nitride‐based UV emitters

S. Kamiyama, H. Amano, I. Akasaki, 2009 .

Inactivation of SARS-CoV-2 by deep ultraviolet light emitting diode: A review

Takeshi Yasui, Masako Nomaguchi, T. Koma, 2021, Japanese Journal of Applied Physics.

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

H. Amano, M. Pristovsek, S. Nitta, 2018, Japanese Journal of Applied Physics.

Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy

H. Hirayama, Y. Takashima, Y. Naoi, 2023, Scientific Reports.

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient

S. Kamiyama, H. Amano, I. Akasaki, 2009 .

Activation energy of Mg in Al0.25Ga0.75N and Al0.5Ga0.5N

S. Kamiyama, H. Amano, I. Akasaki, 2009 .

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

J. Sturm, S. Wagner, A. Kahn, 2015 .

Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

H. Amano, Luke Yates, K. Nagamatsu, 2018, 2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).

Design of AlN-subwavelength grating for deep ultraviolet wavelength reflector operating at 244 nm of wavelength

Masanobu Haraguchi, Yuusuke Takashima, Yoshiki Naoi, 2021, Other Conferences.

Light extraction process in moth-eye structure

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing

Y. Hayashi, H. Miyake, H. Yoshida, 2019, Journal of Crystal Growth.

A 12% Efficient Silicon/PEDOT:PSS Heterojunction Solar Cell Fabricated at < 100 °C

J. Sturm, S. Avasthi, K. Nagamatsu, 2014, IEEE Journal of Photovoltaics.

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, 2008 .

Improved efficiency of hybrid organic photovoltaics by pulsed laser sintering of silver nanowire network transparent electrode.

Joshua A. Spechler, J. Sturm, C. Arnold, 2015, ACS applied materials & interfaces.

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering

H. Amano, A. Tamura, S. Nitta, 2016 .

Relaxation and recovery processes of AlxGa1−xN grown on AlN underlying layer

S. Kamiyama, H. Amano, I. Akasaki, 2009 .

Stable low-recombination n-Si/TiO2 hole-blocking interface and its effect on silicon heterojunction photovoltaics

J. Sturm, S. Avasthi, K. Nagamatsu, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Reactions of 8‐(Triphenylphosphoimino)quinoline (III) with Aryl Aldehydes and Aryl Isocyanates: Formation of 2‐Aryl‐4H‐imidazo[4,5,1‐ij]quinolines and Related Systems.

Hidenori Ito, K. Nagamatsu, A. Kakehi,, 2006 .