H. Witte

发表

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

N. Esser, J. Bläsing, A. Dadgar, 2014 .

Germanium – the superior dopant in n‐type GaN

J. Bläsing, A. Hoffmann, A. Dadgar, 2015 .

Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques

A. Krost, M. Lisker, F. Scholz, 2003 .

Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE

A. Krost, M. Lisker, F. Scholz, 2001 .

Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

M. Stutzmann, A. Krost, M. Lisker, 2000 .

Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy

M. Stutzmann, A. Krost, M. Lisker, 1999 .

On reduction of current leakage in GaN by carbon-doping

A. Strittmatter, J. Bläsing, A. Dadgar, 2016 .

Unstrained InAlN/GaN HEMT structure

J. Bläsing, E. Kohn, T. Zimmermann, 2004 .

Functionalized Thick Film Impedance Sensors for Use in In Vitro Cell Culture

Jens Müller, H. Bartsch, A. Schober, 2018, Biosensors.

High Si and Ge n-type doping of GaN doping - Limits and impact on stress

J. Bläsing, A. Hoffmann, A. Dadgar, 2012 .

Anisotropy of effective electron masses in highly doped nonpolar GaN

J. Bläsing, A. Dadgar, A. Krost, 2013 .

Construction of a cilia inspired carriage system

Hartmut Witte, Philipp Wagner, Danja Dipl.-Biol. Voges, 2017 .

Correlation between macroscopic transport parameters and microscopic electrical properties in GaN

A. Dadgar, A. Krost, A. Krtschil, 2005 .

Outstanding Reliability of Heavy-Ion-Irradiated AlInN/GaN on Silicon HFETs

A. Strittmatter, C. Kristukat, A. Dadgar, 2019, IEEE Transactions on Nuclear Science.

Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer

A. Strittmatter, C. Kristukat, A. Dadgar, 2021, IEEE Transactions on Electron Devices.

Spatial control of the energy metabolism of yeast cells through electrolytic generation of oxygen

A. Krost, T. Mair, M. Hauser, 2009, Physical biology.

Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(1 1 1) interface

A. Dadgar, A. Krost, Kay-Michael Guenther, 2009 .

Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate

G. Gobsch, A. Dadgar, A. Krost, 2004 .

Properties of C‐doped GaN

A. Strittmatter, J. Bläsing, A. Dadgar, 2017 .

MOVPE Growth and Characterization of AlInN FET Structures on Si(111)

J. Bläsing, S. Krischok, A. Dadgar, 2008 .

Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources

S. Einfeldt, M. Lisker, D. Hommel, 1999 .

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3

J. Bläsing, A. Dadgar, A. Krost, 2013 .

Heavy Si doping: The key in heteroepitaxial growth of a‐plane GaN without basal plane stacking faults?

J. Bläsing, A. Dadgar, A. Krost, 2011 .

Correlation between structural and optical properties of amorphous selenium films

J. Bläsing, H. Witte, H. Freistedt, 1994 .

The influence of microstructure on x-ray-induced degradation of dark conductivity of a-Si:H layers

H. Witte, U. Barthel, 1995 .

Suppressing of optical quenching of deep defect-to-band transitions in AlGaN and GaN/AlGaN heterostructures

A. Krost, M. Lisker, F. Scholz, 2004 .

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

A. Strittmatter, J. Bläsing, A. Dadgar, 2017 .

Valence band tomography of wurtzite GaN by spectroscopic ellipsometry

A. Dadgar, M. Feneberg, Karsten Lange, 2018, Applied Physics Express.

The impurity size-effect and phonon deformation potentials in wurtzite GaN

J. Bläsing, A. Dadgar, M. Feneberg, 2020, Semiconductor Science and Technology.

In vitro stimulation of neurons by a planar Ti-Au-electrode interface

T. Voigt, A. Krost, A. Krtschil, 2005 .

Interface and bulk defects in SiC/GaN heterostructures characterized using thermal admittance spectroscopy

B. Meyer, M. Lisker, A. Krtschil, 1999 .

Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults

A. Dadgar, A. Krost, Kay-Michael Guenther, 2009 .

PEDOT coating applied on thick film gold electrodes for increased miniaturization capability

Jens Müller, H. Bartsch, A. Bund, 2019, Progress in Organic Coatings.

Surface properties and biocompatibility of thick film materials used in ceramic bioreactors

H. Bartsch, K. Liefeith, H. Rothe, 2019, Materialia.

AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

T. Voigt, K. Sundmacher, A. Krost, 2011 .

MOVPE growth of GaN on Si - : Substrates and strain

Peter Veit, Jürgen Christen, Armin Dadgar, 2007 .

Medium-deep acceptors in LEC GaAs

H. Witte, W. Siegel, G. Kühnel, 1990 .

Detection of deep levels and compensation mechanism in undoped, liquid‐encapsulated Czochralski n‐type GaAs

H. Witte, W. Siegel, G. Kühnel, 1991 .

Thermal activation energies of undoped semi‐insulating LEC GaAs. Correlation of TDH and TSC results

H. Witte, W. Siegel, G. Kühnel, 1988 .

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

A. Strittmatter, J. Bläsing, A. Dadgar, 2015 .

Inhomopeneity of Semi-Insulating GaAs Wafers with Nearly Uniform Resistivity Distribution

H. Witte, W. Siegel, G. Kühnel, 1989 .

Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors

A. Strittmatter, J. Bläsing, C. Kristukat, 2021, Journal of Physics D: Applied Physics.

Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy

S. Einfeldt, M. Lisker, D. Hommel, 1999 .

Electrical and optical properties of p-SiC/n-GaN heterostructures

W. Mönch, B. Meyer, J. Christen, 1997 .

Unstrained InAlN/GaN HEMT structure

E. Kohn, M. Kunze, H. Witte, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

An X-Ray Detector Based on a-Si: H/Transition Metal Bilayer Systems

H. Witte, A. Panckow, T. Oleynik, 1994 .

Concept of a Microfluidics and Tunneling Effect-Based BioMEMS to Detect Cells

Shengbo Sang, H. Witte, U. Fröber, 2009 .

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

M. Lehmann, A. Strittmatter, J. Bläsing, 2017 .

Influence of bismuth incorporation on the optical properties of a-Se films

H. Witte, H. Freistedt, W. Herms, 1993 .

Anisotropic bow and plastic deformation of GaN on silicon

J. Bläsing, A. Dadgar, A. Krost, 2013 .

Influence of X‐ray exposure on electrical properties of a‐Si: H layers

B. Garke, H. Witte, U. Barthel, 1994 .

Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods

A. Dadgar, A. Krost, J. Christen, 2003 .

Low-resistivity vertical current transport across AlInN/GaN interfaces

A. Strittmatter, J. Bläsing, A. Dadgar, 2020, Japanese Journal of Applied Physics.

High‐current AlInN/GaN field effect transistors

J. Bläsing, M. Neuburger, A. Dadgar, 2005 .

Extracting accurate capacitance voltage curves from impedance spectroscopy

W. Schade, S. Kontermann, A. Krost, 2012 .

Impedance spectroscopy of AlGaN/GaN HEMTs in contact with culture media

A. Dadgar, A. Krost, Kay-Michael Guenther, 2010 .

A novel PDMS micro membrane biosensor based on the analysis of surface stress.

Shengbo Sang, Shengbo Sang, H. Witte, 2010, Biosensors & bioelectronics.

Fabrication of a surface stress-based PDMS micro-membrane biosensor

Shengbo Sang, Shengbo Sang, H. Witte, 2010 .

Finite Element Analysis of the Membrane Used in a Novel BioMEMS

H. Witte, Sheng Bo Sang, Hartmut Witte, 2009 .

Unintentional doping of a-plane GaN by insertion of in situ SiN masks

A. Dadgar, A. Krost, Kay-Michael Guenther, 2011 .

Defect States in SiC/GaN- and SiC/AlGaN/GaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy

M. Lisker, F. Scholz, J. Christen, 1999 .

Defect States in SiC/GaN-and SiC/AlGaN/GaN-Heterostructures Characterized by Admittance and Photocurrent Spectroscopy

M. Lisker, F. Scholz, J. Christen, 1998 .

Deep Trap Characterization In GaN Using Thermal And Optical Admittance Spectroscopy

B. Meyer, S. Einfeldt, M. Lisker, 1997 .

High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

A. Dadgar, A. Krost, M. Hauser, 2014 .

Monitoring glycolytic oscillations using AlGaN/GaN high electron mobility transistors (HEMTs)

A. Dadgar, A. Krost, T. Mair, 2010 .

LTCC-based micro plasma source for the selective treatment of cell cultures

M. Klett, A. Schober, H. Witte, 2017, 2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition.