S. Soltani

发表

Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

M. Bouzidi, Z. Chine, B. Jani, 2016 .

Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

Z. Chine, B. Jani, M. Shakfa, 2017 .

Luminescence dynamics in AlGaN with AlN content of 20%

M. Gerhard, Z. Chine, M. Shakfa, 2017 .

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

M. Bouzidi, Z. Chine, M. Shakfa, 2021 .

Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages

M. Bouzidi, Z. Chine, A. Rebey, 2017 .

Photoreflectance investigation of exciton-acoustic phonon scattering in GaN grown by MOVPE

M. Bouzidi, Z. Chine, B. Jani, 2016 .

Effects of thermal ionized-impurities and mosaicity on the excitonic properties of GaN grown by MOVPE

M. Bouzidi, Z. Chine, B. Jani, 2017 .