N. Koide

发表

Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

S. Kamiyama, I. Akasaki, T. Takeuchi, 2016 .

Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates

T. Kozawa, M. Koike, T. Kachi, 1996 .

MOVPE growth and properties of GaN on (1 1 1)Si using an AlInN intermediate layer

N. Sawaki, N. Koide, M. Yamaguchi, 2009 .

MOVPE growth of GaN on a misoriented sapphire substrate

H. Amano, K. Hiramatsu, I. Akasaki, 1991 .

Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy

K. Hiramatsu, P. Hacke, N. Sawaki, 1994 .

THERMAL STRESS IN GAN EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES

T. Kozawa, K. Manabe, T. Kachi, 1995 .

High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2016 .

GaInN-based tunnel junctions with graded layers

S. Kamiyama, I. Akasaki, T. Takeuchi, 2016 .

Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride

Tetsu Kachi, Takahiro Kozawa, Masafumi Hashimoto, 1994 .

Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes

S. Kamiyama, I. Akasaki, T. Takeuchi, 2019, Japanese Journal of Applied Physics.

Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double Heterostructure

Isamu Akasaki, Hiroshi Amano, Norikatsu Koide, 1993 .

Growth and properties of semi-polar GaN on a patterned silicon substrate

Yoshio Honda, Masahito Yamaguchi, Toshiki Hikosaka, 2009 .

Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

K. Hiramatsu, I. Akasaki, H. Amano, 1991 .

Conductivity control of GaN and fabrication of UV/blue GaN light emitting devices

I. Akasaki, H. Amano, N. Koide, 1993 .

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

H. Amano, K. Hiramatsu, I. Akasaki, 1988 .

Optical gain of optically pumped Al0.1Ga0.9N/GaN double heterostructure at room temperature

Isamu Akasaki, Hiroshi Amano, Norikatsu Koide, 1994 .

Incorporation of carbon on a (11¯01) facet of GaN by MOVPE

N. Sawaki, N. Koide, M. Yamaguchi, 2005 .

Al0.1Ga0.9N/GaN二重ヘテロ接合からの光ポンピングによる室温における低しきい表面誘導放出

H. Amano, I. Akasaki, N. Koide, 1993 .

High‐quality GaInN/GaN multiple quantum wells

Isamu Akasaki, Masayoshi Koike, Hiroshi Amano, 1996 .

A local vibration mode in a carbon doped (1-101)AlGaN

Hiroshi Amano, Yoshio Honda, Nobuhiko Sawaki, 2012, OPTO.