J. Tweedie

发表

High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers

M. Gerhold, Z. Sitar, A. Franke, 2016 .

Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

A. Allerman, M. Boćkowski, M. Dudley, 2020 .

X-ray Characterization and Defect Control of III-Nitrides.

J. Tweedie, 2012 .

X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

R. Dalmau, Z. Sitar, J. Tweedie, 2010 .

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

P. Reddy, S. Pavlidis, Z. Sitar, 2020 .

Design of AlGaN-based quantum structures for low threshold UVC lasers

P. Reddy, Z. Sitar, R. Kirste, 2019 .

The polarization field in Al-rich AlGaN multiple quantum wells

M. H. Breckenridge, P. Reddy, Z. Sitar, 2019, Japanese Journal of Applied Physics.

Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding

P. Reddy, Z. Sitar, R. Kirste, 2020, Japanese Journal of Applied Physics.

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

K. Thonke, R. Dalmau, R. Schlesser, 2011 .

The role of surface kinetics on composition and quality of AlGaN

James Tweedie, Zlatko Sitar, Jon-Paul Maria, 2016 .

On the strain in n-type GaN

J. Lebeau, Z. Sitar, J. Tweedie, 2011 .

Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials

M. Boćkowski, M. Dudley, Jung Han, 2022, Materials Science Forum.

Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates

Z. Sitar, R. Kirste, J. Tweedie, 2022, Applied Physics Letters.

Comparative study of etching high crystalline quality AlN and GaN

Z. Sitar, Wei Guo, J. Tweedie, 2013 .

Structural characteristics of m-plane AlN substrates and homoepitaxial films

Z. Sitar, R. Kirste, J. Tweedie, 2019, Journal of Crystal Growth.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Benjamin E. Gaddy, W. Guo, M. Gerhold, 2014 .

Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

R. Dalmau, Z. Sitar, J. Tweedie, 2011 .

Strain in Si doped GaN and the Fermi level effect

Z. Sitar, J. Tweedie, R. Collazo, 2011 .

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Benjamin E. Gaddy, M. H. Breckenridge, P. Reddy, 2018 .

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

P. Reddy, S. Pavlidis, Z. Sitar, 2022, physica status solidi (RRL) – Rapid Research Letters.

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions.

Benjamin E. Gaddy, J. Maria, M. Losego, 2011, Nature communications.

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

M. H. Breckenridge, M. Boćkowski, M. Goorsky, 2020, physica status solidi (b).

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

James Tweedie, Rafael Dalmau, Martin Feneberg, 2010, ECS Transactions.

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Z. Sitar, J. Tweedie, R. Collazo, 2016 .

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

James Tweedie, Wei Guo, Zlatko Sitar, 2015 .

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

M. H. Breckenridge, P. Reddy, S. Pavlidis, 2021 .

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

James Tweedie, Zlatko Sitar, Seiji Mita, 2015 .

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

P. Reddy, Z. Sitar, R. Kirste, 2023, Applied Physics Letters.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

James Tweedie, Zlatko Sitar, Seiji Mita, 2016 .

Observation of NH2 species on tilted InN (011−1) facets

N. Dietz, R. Atalay, A. Acharya, 2011 .

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

M. H. Breckenridge, M. Boćkowski, P. Reddy, 2021 .

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

P. Reddy, Z. Sitar, R. Kirste, 2020 .

Optical signature of Mg-doped GaN: Transfer processes

James Tweedie, Zlatko Sitar, Ronny Kirste, 2012 .

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

James Tweedie, Rafael Dalmau, Zlatko Sitar, 2010 .

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

R. Dalmau, Z. Sitar, M. Bobea, 2013 .

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

Z. Sitar, R. Collazo, M. Hoffmann, 2020 .

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

James Tweedie, Zlatko Sitar, Ronny Kirste, 2013 .

Schottky contact formation on polar and non-polar AlN

P. Reddy, Z. Sitar, R. Kirste, 2014 .

The effect of N-polar GaN domains as Ohmic contacts

Z. Sitar, J. Tweedie, R. Collazo, 2010 .

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

M. H. Breckenridge, M. Boćkowski, S. Pavlidis, 2022, Applied Physics Express.

Impact of gallium supersaturation on the growth of N‐polar GaN

R. Dalmau, Z. Sitar, J. Tweedie, 2011 .

Growth and characterization of AlxGa1−xN lateral polarity structures

W. Guo, M. Gerhold, Z. Sitar, 2015 .

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

R. Dalmau, Z. Sitar, J. Tweedie, 2010 .

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

N. Dietz, R. Atalay, Z. Sitar, 2008 .

Polarity control and growth of lateral polarity structures in AlN

W. Guo, M. Gerhold, M. Hoffmann, 2013 .

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE

James Tweedie, Zlatko Sitar, Seiji Mita, 2010 .

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

M. Jamil, R. Kirste, Z. Sitar, 2010, Optical Engineering + Applications.

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

James Tweedie, Zlatko Sitar, Ronny Kirste, 2011 .

Fermi level effect on strain of Si-doped GaN

James Tweedie, Zlatko Sitar, Seiji Mita, 2011, OPTO.

Shallow Si donor in ion-implanted homoepitaxial AlN

P. Reddy, Z. Sitar, B. Sarkar, 2020 .

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

P. Reddy, Z. Sitar, R. Kirste, 2015 .

The role of chemical potential in compensation control in Si:AlGaN

M. H. Breckenridge, P. Reddy, Z. Sitar, 2020 .

N- and P- type Doping in Al-rich AlGaN and AlN

M. H. Breckenridge, P. Reddy, Z. Sitar, 2018, ECS Transactions.

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

P. Reddy, S. Pavlidis, Z. Sitar, 2022 .

Characterization of GaN-on-SiC Wafers using a Multi-Method Laser-Based Pump-Probe Technique

S. Sheppard, Yiwen Song, Sukwon Choi, 2023, Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems.