B. Yonkee

发表

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

S. Denbaars, S. Nakamura, T. Margalith, 2015 .

Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

S. Denbaars, S. Nakamura, J. Speck, 2016 .

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

S. Denbaars, S. Nakamura, T. Margalith, 2015 .

Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching

S. Denbaars, S. Nakamura, D. Feezell, 2014 .

Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)]

S. Denbaars, S. Nakamura, D. Feezell, 2014 .

Nonpolar GaN-based vertical-cavity surface-emitting lasers

Charles A. Forman, S. Denbaars, S. Nakamura, 2016, 2017 IEEE Photonics Conference (IPC).

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

S. Denbaars, S. Nakamura, J. Speck, 2016 .

Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯1) AlGaN/GaN buffer layers

S. Denbaars, S. Nakamura, J. Speck, 2015 .

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact.

Shuji Nakamura, Changmin Lee, S. Denbaars, 2016, Optics express.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

S. Denbaars, S. Nakamura, J. Speck, 2016 .

Flip-chip blue LEDs grown on bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

S. Denbaars, S. Nakamura, J. Leonard, 2016 .

Solid and hollow inorganic replicas of biological photonic crystals

M. Bartl, B. Yonkee, M. Jorgensen, 2011 .

Strong modification of density of optical states in biotemplated photonic crystals

Michael H. Bartl, Matthew R. Jorgensen, Benjamin P. Yonkee, 2011, Optics + Optoelectronics.

Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts

S. Denbaars, S. Nakamura, J. Speck, 2015 .

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

James S. Speck, Shuji Nakamura, Daniel A. Cohen, 2016 .

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

B. S. Ooi, J. T. Leonard, E. C. Young, 2016, SPIE OPTO.

High wall-plug efficiency blue III-nitride LEDs designed for low current density operation.

S. Denbaars, C. Weisbuch, S. Nakamura, 2017, Optics express.

Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

S. Denbaars, S. Nakamura, J. Speck, 2017, Optics express.

Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates.

Shuji Nakamura, S. Denbaars, S. Nakamura, 2016, Optics express.