Jing Yang

发表

Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide

Ping Chen, D. Jiang, Degang Zhao, 2019, Superlattices and Microstructures.

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide*

Mo Li, Wei Liu, Ping Chen, 2017 .

Suppression of optical field leakage to GaN substrate in GaN-based green laser diode

Wei Liu, Ping Chen, D. Jiang, 2017 .

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Mo Li, Wei Liu, Ping Chen, 2018, Japanese Journal of Applied Physics.

Study the influence mechanism of In/Ga ratio on InGaN waveguide layers during epitaxial growth

Ping Chen, Degang Zhao, F. Liang, 2022, Journal of Alloys and Compounds.

Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN.

Degang Zhao, Ping Chen, Zongshun Liu, 2021, Optics express.

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials*

Mo Li, Hui Yang, Wei Liu, 2017 .

A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode

Ping Chen, Degang Zhao, F. Liang, 2022, Journal of Semiconductors.

The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation

Ping Chen, Degang Zhao, F. Liang, 2022, Crystals.

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

D. Jiang, Degang Zhao, Ping Chen, 2018, Nanomaterials.

Mo Li, D. Jiang, Degang Zhao, 2018, Nanomaterials.

Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors

Hui Yang, Baoshun Zhang, D. Jiang, 2014 .

Performance improvement of GaN-based blue and ultraviolet double quantum well laser diodes by using stepped-doped lower waveguide

Ping Chen, Degang Zhao, F. Liang, 2021 .

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

Mo Li, Wei Liu, D. Jiang, 2018, IEEE Photonics Journal.

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

Mo Li, Hui Yang, Wei Liu, 2017, IEEE Photonics Journal.

Monotonic variation in carbon-related defects with Fermi level in different conductive types of GaN

Ping Chen, Degang Zhao, F. Liang, 2021, AIP Advances.

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Ping Chen, Degang Zhao, F. Liang, 2020 .

Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes

W. Liu, Hui Yang, L. Xiaojing, 2016 .

Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells

Ping Chen, Degang Zhao, F. Liang, 2021 .

Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells

Wei Liu, D. Jiang, Degang Zhao, 2019, Materials Research Express.

Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption

Mo Li, Wei Liu, Ping Chen, 2018, Applied Surface Science.

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Degang Zhao, F. Liang, Zongshun Liu, 2020, Nanoscale Research Letters.

Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

Ping Chen, D. Jiang, Degang Zhao, 2020 .

Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs

Mo Li, Wei Liu, D. Jiang, 2018 .

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Mo Li, Hui Yang, Wei Liu, 2017 .

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.

Mo Li, Wei Liu, Ping Chen, 2017, Applied optics.

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors

Degang Zhao, F. Liang, Zongshun Liu, 2022, Nanomaterials.

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

Ping Chen, D. Jiang, Degang Zhao, 2019, Nanoscale Research Letters.

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Mo Li, Wei Liu, Ping Chen, 2018 .

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Mo Li, Z. Liu, W. Wang, 2018, AIP Advances.

Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

Hui Yang, D. Jiang, Degang Zhao, 2016 .

Characteristics of InGaN-based green laser diodes with additional InGaN hole reservoir layer

Ping Chen, Degang Zhao, F. Liang, 2021 .

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells.

W. Liu, Mo Li, Ping Chen, 2018, Optics express.

Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes.

Ping Chen, Degang Zhao, F. Liang, 2021, Optics express.

The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes

Ping Chen, Degang Zhao, F. Liang, 2022, Optics & Laser Technology.

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

F. Liang, Zongshun Liu, Jing Yang, 2021, Chinese Physics B.

New mechanisms of cavity facet degradation for GaN-based laser diodes

Ping Chen, F. Liang, Zongshun Liu, 2021 .

The Mechanisms of AlGaN Device Buffer Layer Growth and Crystalline Quality Improvement: Restraint of Gallium Residues, Mismatch Stress Relief, and Control of Aluminum Atom Migration Length

Degang Zhao, F. Liang, Zongshun Liu, 2022, Crystals.

Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells

Degang Zhao, F. Liang, Zongshun Liu, 2022, Nanomaterials.

Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104)

Mo Li, Wei Liu, Ping Chen, 2017 .

Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells

Ping Chen, D. Jiang, Degang Zhao, 2019, Optical Materials Express.

Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes

Ping Chen, D. Jiang, Degang Zhao, 2019, Superlattices and Microstructures.

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

D. Jiang, F. Liang, Jing Yang, 2023, Crystals.

Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

Hui Yang, Ping Chen, D. Jiang, 2017 .

Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition

Degang Zhao, Ping Chen, F. Liang, 2021 .

The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells

Degang Zhao, F. Liang, Zongshun Liu, 2022, Journal of Materials Research and Technology.

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Degang Zhao, Ping Chen, F. Liang, 2021, Nanoscale Research Letters.

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Ping Chen, D. Jiang, Degang Zhao, 2019, Nanoscale Research Letters.

InGaN surface morphology evolution investigated by atomic force microscope with power spectral density analysis

Degang Zhao, F. Liang, Zongshun Liu, 2023, Journal of Crystal Growth.

Improved performance of GaN-based blue laser diodes using asymmetric multiple quantum wells without the first quantum barrier layer.

Ping Chen, F. Liang, Zongshun Liu, 2022, Optics express.

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

Ping Chen, Degang Zhao, F. Liang, 2021, Journal of Semiconductors.

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

Wei Liu, Ping Chen, D. Jiang, 2020 .

Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

Degang Zhao, F. Liang, Zongshun Liu, 2021 .

Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers

D. Jiang, Degang Zhao, F. Liang, 2019, Journal of Alloys and Compounds.

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

D. Jiang, Degang Zhao, F. Liang, 2020, Nanoscale Research Letters.

Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

Degang Zhao, Ping-Zen Chen, F. Liang, 2021, Results in Physics.

The residual C concentration control for low temperature growth p-type GaN

Wei Liu, Ping Chen, D. Jiang, 2017 .

Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer

Ping Chen, Degang Zhao, Wenjie Wang, 2021, Materials Today Communications.

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer*

L. Xiaojing, D. Jiang, Degang Zhao, 2015 .

Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination

Mo Li, Wei Liu, Ping Chen, 2017 .

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Ping Chen, Degang Zhao, F. Liang, 2021, Nanomaterials.

Influence of carrier gas H 2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

Mo Li, Wei Liu, Ping Chen, 2018, Chinese Physics B.

Suppression of V-pits formation in InGaN layer by stepped growth with annealing interval

Degang Zhao, F. Liang, Zongshun Liu, 2022, Surfaces and Interfaces.

Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer

Ping Chen, Degang Zhao, F. Liang, 2021 .

Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer

D. Jiang, Degang Zhao, Ping Chen, 2020 .

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Mo Li, Wei Liu, Ping Chen, 2018 .

New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode

Mo Li, Wei Liu, Ping Chen, 2017 .

Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

D. Jiang, Degang Zhao, Wenjie Wang, 2019, Journal of Alloys and Compounds.

Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector

Ping Chen, Degang Zhao, F. Liang, 2021 .

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier

Degang Zhao, F. Liang, Zongshun Liu, 2022, Nanomaterials.

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes*

Mo Li, Wei Liu, Ping Chen, 2018 .

Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure.

Degang Zhao, F. Liang, Zongshun Liu, 2023, Optics express.

The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

Degang Zhao, F. Liang, Zongshun Liu, 2022, AIP Advances.

Role of inserting an InGaN strain release interlayer in AlGaN growth

Degang Zhao, F. Liang, Zongshun Liu, 2023, Results in Physics.

Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h

Hui Yang, Ping Chen, D. Jiang, 2019, Journal of Semiconductors.

Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue-violet laser diodes

Jianjun Zhu, Hui Yang, Desheng Jiang, 2015 .

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths*

Mo Li, Hui Yang, L. Xiaojing, 2017 .

Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells

Degang Zhao, F. Liang, Zongshun Liu, 2023, Results in Physics.

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Wei Liu, Degang Zhao, Ping Chen, 2022, Crystals.

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.

Mo Li, Wei Liu, Ping Chen, 2018, Optics express.

Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness

Wei Liu, D. Jiang, Degang Zhao, 2020, Journal of Electronic Materials.

Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers

D. Jiang, Degang Zhao, Zhenyu Chen, 2022, Nanomaterials.

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes*

Mo Li, Wei Liu, Ping Chen, 2017 .

Startified Thermal Degradation in Blue InGaN Quantum Well Structures: P-GaN Growth Temperature and Its influence on Quantum Well Optical Properties

F. Liang, Zongshun Liu, Jing Yang, 2024, Journal of Alloys and Compounds.

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Hui Yang, L. Xiaojing, Ping Chen, 2016 .