Y. Xing

发表

Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide

Ping Chen, D. Jiang, Degang Zhao, 2019, Superlattices and Microstructures.

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide*

Mo Li, Wei Liu, Ping Chen, 2017 .

Suppression of optical field leakage to GaN substrate in GaN-based green laser diode

Wei Liu, Ping Chen, D. Jiang, 2017 .

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Mo Li, Wei Liu, Ping Chen, 2018, Japanese Journal of Applied Physics.

Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold.

Z. Liu, J. Zhang, J. Zhu, 2017, Applied optics.

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

D. Jiang, Degang Zhao, Ping Chen, 2018, Nanomaterials.

Mo Li, D. Jiang, Degang Zhao, 2018, Nanomaterials.

Performance improvement of GaN-based blue and ultraviolet double quantum well laser diodes by using stepped-doped lower waveguide

Ping Chen, Degang Zhao, F. Liang, 2021 .

Enhancing the performance of InGaN/GaN multiple quantum well blue laser diodes by suppressing the overflow of holes

Z. Liu, Dongshan Zhao, D. Jiang, 2018, Superlattices and Microstructures.

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

Mo Li, Wei Liu, D. Jiang, 2018, IEEE Photonics Journal.

The compensation role of deep defects in the electric properties of lightly Si-doped GaN

Z. Liu, Wenzhu Liu, Dongshan Zhao, 2019, Journal of Alloys and Compounds.

Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption

Mo Li, Wei Liu, Ping Chen, 2018, Applied Surface Science.

The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

Mo Li, Z. Liu, D. Jiang, 2018, Optical Materials.

Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

Ping Chen, D. Jiang, Degang Zhao, 2020 .

Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs

Mo Li, Wei Liu, D. Jiang, 2018 .

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p ++ -GaN layer

Mo Li, Hui Yang, Wei Liu, 2017 .

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.

Mo Li, Wei Liu, Ping Chen, 2017, Applied optics.

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

Ping Chen, D. Jiang, Degang Zhao, 2019, Nanoscale Research Letters.

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Mo Li, Wei Liu, Ping Chen, 2018 .

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Mo Li, Z. Liu, W. Wang, 2018, AIP Advances.

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells.

W. Liu, Mo Li, Ping Chen, 2018, Optics express.

Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104)

Mo Li, Wei Liu, Ping Chen, 2017 .

Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes

Ping Chen, D. Jiang, Degang Zhao, 2019, Superlattices and Microstructures.

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Ping Chen, D. Jiang, Degang Zhao, 2019, Nanoscale Research Letters.

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

Wei Liu, Ping Chen, D. Jiang, 2020 .

The residual C concentration control for low temperature growth p-type GaN

Wei Liu, Ping Chen, D. Jiang, 2017 .

Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination

Mo Li, Wei Liu, Ping Chen, 2017 .

Influence of carrier gas H 2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

Mo Li, Wei Liu, Ping Chen, 2018, Chinese Physics B.

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Mo Li, Wei Liu, Ping Chen, 2018 .

New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode

Mo Li, Wei Liu, Ping Chen, 2017 .

Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes

D. Jiang, F. Liang, Y. Xing, 2020 .

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes*

Mo Li, Wei Liu, Ping Chen, 2018 .

Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes

Z. Liu, D. Jiang, Y. Xing, 2019, Applied Physics B.

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.

Mo Li, Wei Liu, Ping Chen, 2018, Optics express.

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes*

Mo Li, Wei Liu, Ping Chen, 2017 .