K. Takemoto

发表

Growth and characterization of freestanding GaN substrates

Y. Kumagai, A. Koukitu, M. Ueno, 2002 .

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors

Yoshinao Kumagai, Kensaku Motoki, Hitoshi Kasai, 2001 .

GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl3: investigation of the growth dependence on NH3 and additional Cl2

H. Murakami, K. Takemoto, Nao Takekawa, 2019, Japanese Journal of Applied Physics.

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1−xN using GaCl3 and InCl3

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface

Y. Kumagai, A. Koukitu, K. Takemoto, 2000 .

Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates

Y. Kumagai, A. Koukitu, H. Murakami, 2005 .

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Y. Kumagai, A. Koukitu, H. Murakami, 2006 .

Influence of lattice polarity on wurzite GaN{0 0 0 1} decomposition as studied by in situ gravimetric monitoring method

Y. Kumagai, A. Koukitu, K. Takemoto, 2002 .

Preparation of large GaN substrates

Yoshinao Kumagai, Kensaku Motoki, Hitoshi Kasai, 2002 .

High growth rate deposition of oriented InN pillar crystals

K. Takemoto, T. Nakamura, N. Takahashi, 2005 .

Influence of Polarity on Surface Reaction between GaN{0001} and Hydrogen

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy.

Y. Kumagai, A. Koukitu, H. Murakami, 2000 .