H. Seki

发表

Growth and characterization of freestanding GaN substrates

Y. Kumagai, A. Koukitu, M. Ueno, 2002 .

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors

Yoshinao Kumagai, Kensaku Motoki, Hitoshi Kasai, 2001 .

Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System

A. Koukitu, H. Seki, 1977 .

Growth of InN at High Temperature by Halide Vapor Phase Epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1997 .

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1−xN using GaCl3 and InCl3

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3

Y. Kumagai, A. Koukitu, K. Takemoto, 2001 .

Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN

Y. Kumagai, A. Koukitu, H. Murakami, 2002 .

Preparation and characterization of Y-system superconducting thin films by mist microwave-plasma chemical vapour deposition

A. Koukitu, H. Seki, N. Takahashi, 1996, Journal of Materials Science.

Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALE

A. Koukitu, H. Seki, 1989 .

Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides

A. Koukitu, Tetsuya Taki, H. Seki, 1999 .

Growth and characterization of YBa2Cu3Ox and NdBa2Cu3Ox superconducting thin films by mist microwave-plasma chemical vapor deposition using a CeO2 buffer layer

A. Koukitu, H. Seki, N. Takahashi, 2000 .

In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methods

A. Koukitu, H. Seki, N. Takahashi, 1995 .

Vapor phase epitaxy of GaAs by the pulsed introduction of H2

A. Koukitu, Takeyuki Suzuki, H. Seki, 1985 .

Vapor-phase epitaxy of InxGa1−xN using chloride sources

A. Koukitu, H. Seki, N. Takahashi, 1998 .

Superconducting transition temperature in the (YBa2Cu3O7-δ)1-x (MeO)x system (MeO=PbO, SrO, ZnO, Bi2O3, SnO2, TeO2, V2O5, WO3 and MoO3)

A. Koukitu, Takeyuki Suzuki, H. Seki, 1988 .

Relationship between crystal structures and Pb addition of TlSrCaCuO superconducting thin films prepared by the mist microwave plasma chemical vapor deposition method

A. Koukitu, H. Seki, Hiroshi Seki, 1995 .

As-grown preparation of Ag-doped Y-Ba-Cu-O superconducting thin films by mist microwave plasma chemical vapour deposition

A. Koukitu, H. Seki, N. Takahashi, 1995 .

Intercalation of phenylethylamines intoα-zirconium phosphate and characterization of intercalates

H. Seki, I. Tomita, Y. Hasegawa, 1991 .

Equilibrium Computation for the Vapor Growth of InxGa1-xP Crystals

H. Seki, S. Minagawa, 1972 .

Thermodynamic Calculation for the Vapor Growth of InxGa1-xAs: The In-Ga-As-Cl-H System

H. Seki, S. Minagawa, H. Eguchi, 1972 .

Vapor Transport Thermodynamics of GaP-Cl2-H2 System in an Open Tube

H. Seki, H. Araki, 1967 .

Superconducting transition temperature in the (YBa2Cu3Oy)1−x(MeO)x system (MeO=AlO1.5, CeO2, CrO1.5, GaO1.5, GeO2, InO1.5, MgO, MnO2, NbO2.5, SiO2, TaO2.5, TiO2 and ZrO2)

Takeyuki Suzuki, H. Seki, Koichiro Takahashi, 1989 .

Superconducting transition temperature in the Y1−xMxBa2Cu3Oy system

Takeyuki Suzuki, H. Seki, Koichiro Takahashi, 1989 .

Effect of Ag addition on YBa2Cu3O7 − δ superconducting thin films prepared by mist microwave-plasma chemical vapor deposition

A. Koukitu, H. Seki, N. Takahashi, 1996 .

Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube

H. Seki, K. Moriyama, I. Asakawa, 1968 .

Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN

Akinori Koukitu, A. Koukitu, Tetsuya Taki, 1998 .

Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors

A. Koukitu, H. Seki, 1986 .

Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H2Se

A. Koukitu, H. Seki, H. Ikeda, 1990 .

Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2 System

H. Seki, Masayoshi Uramoto, K. Moriyama, 1967 .

In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN

Y. Kumagai, A. Koukitu, H. Seki, 2000 .

In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1996 .

Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process

A. Koukitu, H. Seki, 1980 .

Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN

A. Koukitu, H. Seki, 1997 .

The VPE growth of InGaP by the single flat temperature zone method

A. Koukitu, Takeyuki Suzuki, H. Seki, 1988 .

Substitution reaction of surface adsorbed P atoms to as atoms in the GaP/GaAs atomic layer epitaxy

A. Koukitu, Tetsuya Taki, H. Seki, 1998 .

Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy

Y. Kumagai, A. Koukitu, H. Seki, 2000 .

Thermodynamic study on phase separation during MOVPE growth of InxGa1-xN

A. Koukitu, H. Seki, 1998 .

Thermodynamic analysis of the MOVPE growth of InxGa1-xN

A. Koukitu, Tetsuya Taki, H. Seki, 1997 .

Thermodynamic analysis of the MOVPE growth process

A. Koukitu, Takeyuki Suzuki, H. Seki, 1986 .

Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1994 .

Investigation of Hydrogen Chemisorption on GaAs (111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation

Y. Kumagai, A. Koukitu, A. Miyamoto, 2000 .

Growth of a NdBaCuO Superconducting Thin Film on a MgO Substrate by Mist Microwave-Plasma Chemical Vapor Deposition Using a CeO2 Buffer Layer

A. Koukitu, H. Seki, N. Takahashi, 1998 .

In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1995 .

A new vapour growth method for III–V compound semiconductors using a single flat temperature zone

H. Seki, H. Eguchi, H. Kobayashi, 1974 .

Thermodynamic analysis of the MOVPE growth of quaternary III V alloy semiconductors

A. Koukitu, H. Seki, 1986 .

Thermodynamic analysis of InxGa1−xN growth conditions in molecular beam epitaxy

A. Koukitu, Yanqiu Li, H. Seki, 2000 .

Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2 System

H. Seki, K. Moriyama, 1967 .

Thermodynamic analysis of molecular beam epitaxy of II–VI semiconductors

A. Koukitu, Takeyuki Suzuki, H. Seki, 1986 .

The effect of Pb addition on Bi-Sr-Ca-Cu-O superconducting thin films prepared by the mist microwave-plasma chemical vapor deposition method

H. Seki, Y. Kamioka, N. Takahashi, 1994 .

Crystallinity and Superconducting Properties of YBa2Cu3O7−x Thin Films on NdGaO3 Substrate Prepared by Mist Microwave-plasma CVD

A. Koukitu, H. Seki, N. Takahashi, 1998 .

Preparation of (Tl, Bi, Pb)-Sr-Ca-Cu-O superconducting thin films by the mist microwave plasma chemical vapour deposition method

A. Koukitu, H. Seki, N. Takahashi, 1995 .

Preparation of Y-Ba-Cu-O Superconducting Thin Films by the Mist Microwave Plasma Decomposition Method

A. Koukitu, I. Tanaka, H. Seki, 1989 .

Growth of GaP by cold-wall metalorganic-chloride vapor phase epitaxy

A. Koukitu, H. Seki, N. Takahashi, 1994 .

Thermodynamic analysis of GaAs growth by cold-wall metalorganic-chloride vapor phase epitaxy

K. Saitoh, H. Seki, H. Ikeda, 1991 .

Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3

A. Koukitu, Yoshito Jin, F. Hasegawa, 1991 .

Preparation of large GaN substrates

Yoshinao Kumagai, Kensaku Motoki, Hitoshi Kasai, 2002 .

Thermodynamic Analysis of the MOVPE Growth of InAlN

Y. Kumagai, A. Koukitu, H. Seki, 2000 .

Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfaces

Y. Kumagai, A. Koukitu, H. Murakami, 2003 .

Atomic layer epitaxy of GaAsP and InAsP by halogen system

A. Koukitu, H. Seki, A. Saegusa, 1990 .