P. Hageman

发表

Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

M. Boćkowski, J. Weyher, Z. Romanowski, 2002 .

Strain relaxation in GaN grown on vicinal 4H‐SiC(0001) substrates

P. Larsen, J. Pernot, É. Bustarret, 2007, cond-mat/0702491.

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

M. Boćkowski, J. Weyher, S. Porowski, 2003 .

Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy

J. Nijenhuis, L. J. Giling, P. Hageman, 1997 .

Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition

M. D. Croon, L. J. Giling, P. Hageman, 1992 .

Si-doping of MOCVD GaAs: Closer analysis of the incorporation process

M. D. Croon, L. J. Giling, A. Bons, 1989 .

Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

J. Weyher, F. Tichelaar, H. Zandbergen, 2001 .

Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates

L. J. Giling, P. Hageman, M. J. Anders, 1997 .

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Boleslaw Lucznik, Jari Likonen, Filip Tuomisto, 2005 .

Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition

P. Larsen, F. Tuomisto, P. Hageman, 2006 .

Scaling up a horizontal HVPE reactor

P. Larsen, C. Kleijn, P. Hageman, 2007 .

Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy

P. Larsen, J. Weyher, P. Christianen, 2001 .

Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy

P. Larsen, P. Christianen, P. Hageman, 2001 .

Low pressure MOVPE grown AlGaN for UV photodetector applications

E. Monroy, F. Omnès, F. Calle, 1999 .

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

J. Weyher, P. Hageman, H. Ashraf, 2009 .

Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates

E. Jezierska, P. Larsen, J. Weyher, 2007 .

Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD

P. Larsen, J. Weyher, P. Hageman, 2005 .

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

P. Larsen, J. Weyher, P. Hageman, 2005 .

Realising epitaxial growth of GaN on (001) diamond

J. G. Buijnsters, E. Vlieg, P. Tinnemans, 2011 .

Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates

J. G. Buijnsters, E. Vlieg, P. Hageman, 2010 .

Growth of GaN on nano-crystalline diamond substrates

J. G. Buijnsters, E. Vlieg, P. Hageman, 2009 .

Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method

J. Misiewicz, R. Kucharski, R. Kudrawiec, 2011 .

ScAlN nanowires: A cathodoluminescence study

R. Yakimova, G. Yazdi, M. Verheijen, 2009 .

P. Larsen, J. Weyher, P. Christianen, 2000 .

Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas

P. Larsen, M. Syperek, J. Misiewicz, 2007 .

Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy

P. Larsen, M. Syperek, J. Misiewicz, 2006 .

Photoreflectance investigations of a donor-related transition in AlGaN∕GaN transistor structures

P. Larsen, M. Syperek, J. Misiewicz, 2005 .

The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN

P. Larsen, J. Weyher, P. Hageman, 2002 .

MOCVD PBZRxti1−xo3 thin films on platinized silicon wafers and srtio3 crystals

P. Larsen, A. Zauner, P. Hageman, 2001 .

On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

J. Weyher, E. Vlieg, P. Hageman, 2009 .

Photoluminescence Study of Piezoelectric Polarization in Strained AlxGa1—xN/GaN Single Quantum Wells

P. Larsen, P. Christianen, F. Tichelaar, 2001 .

An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD

P. Larsen, A. Zauner, P. Hageman, 1999 .

Temperature Dependent Morphology Transition of GaN Films

J. Schermer, P. Larsen, A. Zauner, 1999 .

Improvement of the optical and structural properties of MOCVD grown GaN on sapphire by an in-situ SiN treatment

P. Larsen, J. Weyher, S. Haffouz, 2001 .

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

P. D. Brown, P. Larsen, C. Boothroyd, 1999 .

Dependence of indium incorporation upon the substrate misorientation during growth of In(x)Ga(1)1-xAs by metalorganic vapour phase epitaxy

J. Nijenhuis, L. J. Giling, P. Hageman, 1996 .

Radiatively controlled lifetimes in AlxGa1−xAs grown by metalorganic vapor phase epitaxy

L. J. Giling, P. Hageman, R. Thomeer, 1994 .

n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

W. Schaff, Z. Liliental-Weber, P. Hageman, 2004 .

Two-dimensional electron gases in low-pressure metalorganic vapour phase epitaxially grown InGaP homojunctions

L. J. Giling, P. Hageman, G. Bauhuis, 1994 .

Two‐dimensional electron gas in modulation‐doped, ordered‐disordered GaInP2 homojunctions

L. J. Giling, P. Hageman, G. Bauhuis, 1994 .

Heterometallic Pt-Au complexes with μ-3 S bridging. Syntheses and structures of Pt2 (PPh3)4(μ-SAuCl)2·2CH2Cl2 and Pt2(PPh3)4−(μ-S)(μ-SAuPPh3)NO3·0.5H2O

P. Hageman, W. P. Bosman, J. Smits, 1986 .

Heterometallic Pt-Au Complexes with μ-3 S Bridging. Syntheses and Structures of Pt2(PPh3)4(μ-SAuCl)2·2 CH2Cl2 and Pt2(PPh3)4(μ-S)(μ-SAuPPh3)NO3·0.5 H2O.

P. Hageman, W. P. Bosman, J. Smits, 1987 .

Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H‐SiC substrates by HVPE

M. Verheijen, E. Vlieg, J. Edgar, 2009 .

Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition

P. Larsen, J. Weyher, P. Hageman, 2008 .

Reactions of cis‐2,3‐Dimethylaziridine, 3‐Pyrroline and Pyrrolidine with Me3Al and Me3Ga: Adducts and Dimeric Amides

R. Gelder, P. Hageman, P. Budzelaar, 2003 .

Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour deposition

G. Bauhuis, P. Hageman, A. V. Geelen, 1992 .

Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate

G. J. Bauhuis, P. Schmidt, L. J. Giling, 1997 .

Interplay between GaN and AlN sublattices in wurtzite AlxGa1-xN alloys revealed by raman spectroscopy

E. Monroy, F. Omnès, F. Calle, 2002 .

Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

J. Schermer, P. Larsen, M. Plomp, 2000 .

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Herbert Zirath, Vincent Desmaris, P. K. Larsen, 2006 .

Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy

J. Misiewicz, P. K. Larsen, Marcin Motyka, 2006 .

Heavily doped p-type AlGaInP grown by metalorganic chemical vapor deposition

P. K. Larsen, G. J. Bauhuis, G. Bauhuis, 1998 .

Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

M. D. Croon, P. Hageman, X. Tang, 1993 .

Misorientation dependence of zinc incorporation in GaAs

P. Hageman, M. J. Anders, L. Giling, 1994 .

Critical layer thickness of MOVPE-grown GaAs on InxGa1-xAs

J. Nijenhuis, P. Hageman, P. V. D. Wel, 1991 .

Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour deposition

M. D. Croon, P. Hageman, X. Tang, 1989 .

High quality GaN layers on Si(111) substrates: AlN buffer layer optimisation and insertion of a SiN intermediate layer

S. Haffouz, P. K. Larsen, P. Larsen, 2001 .

Growth of high-quality AlxGa1−xAs (x = 0.05−0.65) by low-pressure metalorganic vapour phase epitaxy using dimethylethylamine-alane

P. Hageman, S. Olsthoorn, L. Giling, 1994 .

Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

P. K. Larsen, C.E.C. Dam, P. Larsen, 2005 .

Structure and morphology of epitaxial PbZrO3 films grown by metalorganic chemical vapor deposition

J. Schermer, F. Tichelaar, P. Hageman, 2002 .

Thick GaN layers grown by HVPE : Influence of the templates

J. Weyher, P. Hageman, H. Ashraf, 2008 .

Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

Q. Wahab, M. Asghar, P. Hageman, 2010 .

Spectroscopic ellipsometry on GaN: Comparison between hetero-epitaxial layers and bulk crystals

P. Larsen, A. Zauner, S. Porowski, 1998 .

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

J. Weyher, E. Vlieg, P. Hageman, 2010 .

Interface state density of free-standing GaN Schottky diodes

Q. Wahab, M. Asghar, P. Hageman, 2010 .

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

J. Weyher, J. Misiewicz, R. Kudrawiec, 2010 .

Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment

C. Humphreys, R. Fornari, P. Hageman, 2010 .

Method for HVPE growth of thick crack-free GaN layers

P. K. Larsen, C.E.C. Dam, P. Larsen, 2006 .

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Chris R. Kleijn, P. K. Larsen, C.E.C. Dam, 2004 .

Incorporation of Pb, Ti, and Zr into MOCVD grown PbZrxTi1-xO3 thin films

E. Haverkamp, P. Larsen, P. Hageman, 2000 .

GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition

J. Schermer, P. Larsen, P. Hageman, 2003 .

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

P. Larsen, P. Vennégués, S. Haffouz, 2003 .

What Makes Good Templates for HVPE GaN Growth

P. Larsen, P. Hageman, A. Grzegorczyk, 2005 .

Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers

P. Larsen, H. Jos, P. Hageman, 2005 .

Influence of In on the surface morphology of HVPE grown GaN

P. Larsen, P. Hageman, W. V. Enckevort, 2007 .

Complementary study of defects in GaN by photo-etching and TEM

H. W. Zandbergen, F. D. Tichelaar, P. K. Larsen, 2002 .

Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

P. Larsen, S. Haffouz, P. Hageman, 2005 .

Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate

P. Larsen, J. Weyher, S. Haffouz, 2003 .

Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

A. Zukauskas, S. Juršėnas, P. Hageman, 2003 .

Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour deposition

P. Hageman, X. Tang, L. Giling, 1989 .

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

H. Zirath, N. Rorsman, H.F.F. Jos, 2006, IEEE Transactions on Electron Devices.

MOCVD growth and doping studies of III/V semiconductors

P. Hageman, 1993 .

Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

P. Larsen, J. Weyher, S. Haffouz, 2001 .

Influence of Ga precursor choice on ordering degree of MOVPE grown Ga0.5In0.5P

P. Hageman, G. Bauhuis, S. Olsthoorn, 1998 .

Mocvd growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substrates

E. Haverkamp, P. Larsen, P. Hageman, 2000 .

Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr, Ti)O3 thin films

E. Haverkamp, P. Larsen, N. Duan, 2000 .