I. Gorczyca

发表

Limitations to band gap tuning in nitride semiconductor alloys

T. Suski, I. Gorczyca, N. Christensen, 2010 .

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells

R. Kudrawiec, M. Baranowski, P. Perlin, 2020, Scientific Reports.

Electronic Structure of GaN x As 1−x Under Pressure

I. Gorczyca, N. Christensen, A. Svane, 2008 .

High pressure studies of radiative recombination processes in nitride semiconductor alloys and quantum structures

A. Kaminska, A. Suchocki, S. Krukowski, 2019, Japanese Journal of Applied Physics.

Band structure and high-pressure phase transition in GaN

I. Gorczyca, N. Christensen, 1991 .

Electronic structure of GaAs1−xNx under pressure

I. Gorczyca, N. Christensen, A. Svane, 2005 .

Recurrent cerebral infarcts as the first manifestation of infection with the HIV virus.

I. Gorczyca, J. Pniewski, M. Furmanek, 2005, Folia neuropathologica.

Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

T. Suski, I. Gorczyca, N. Christensen, 2009 .

Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures

S. Denbaars, S. Lepkowski, N. Grandjean, 2000 .

Band gap bowings and anomalous pressure effects in III–V nitride alloys: Role of In‐segregation

T. Suski, I. Gorczyca, N. Christensen, 2011 .

CALCULATED ELECTRONIC STRUCTURE OF ZnS/ZnSe SUPERLATTICES

I. Gorczyca, N. Christensen, 1989 .

Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy

E. Grzanka, R. Czernecki, J. Smalc-Koziorowska, 2017 .

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

T. Suski, I. Gorczyca, N. Christensen, 2015 .

Band gaps and internal electric fields in semipolar short period InN/GaN superlattices

T. Suski, I. Gorczyca, N. Christensen, 2014 .

Band gaps in InN/GaN superlattices: Nonpolar and polar growth directions

T. Suski, I. Gorczyca, N. Christensen, 2013 .

Precise band gap engineering using double barrier InGaN/GaN superlattices

E. Grzanka, J. Smalc-Koziorowska, T. Suski, 2022, Micro and Nanostructures.

Proposition of new stable rare-earth ternary semiconductor sulfides of type LaTlS2 (La= Er, Eu, Tb): Ab-initio study and prospects for optoelectronic, spintronic and thermoelectric applications

T. Alshahrani, M. Irfan, S. Muhammad, 2022, Materials Science in Semiconductor Processing.

Electronic structure of GaAs1-xNxGaAs1-xNx and SnO under pressure

I. Gorczyca, N. Christensen, A. Svane, 2006 .

Pressure and composition dependence of the electronic structure of GaAs 1 − x N x

C. Skierbiszewski, T. Suski, I. Gorczyca, 2002 .

Cubic Inn Inclusions as the Cause for the Unusually Weak Pressure Shift of the Luminescence in InGaN

P. G. Eliseev, M. Osiński, P. Eliseev, 1997 .

Band structure and high-pressure phase transition in GaN, AlN, InN and BN

I. Gorczyca, N. Christensen, 1993 .

Influence of hydrostatic pressure on cation vacancies in GaN, AlN, and GaAs

I. Gorczyca, N. Christensen, A. Svane, 2002 .

Correlations of the remote impurity charges—A method of 2DEG mobility tuning in GaAs/AlGaAs heterostructures

G. Böhm, E. Gornik, G. Weimann, 1994 .

Band gap bowing in quaternary nitride semiconducting alloys

T. Suski, I. Gorczyca, N. Christensen, 2011 .

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

S. Lepkowski, J. Carlin, E. Feltin, 2010 .

In‐clustering effects in InAlN and InGaN revealed by high pressure studies

H. Schenk, T. Suski, I. Gorczyca, 2010 .

Cubic InN inclusions : Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells

P. G. Eliseev, M. Osiński, P. Perlin, 1998 .

The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy

Xiaodong Wang, M. Albrecht, T. Suski, 2014 .

Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory

E. Gullikson, J. Underwood, R. Perera, 2000 .

A DFT+U Study of the Effect of Transition Metal Replacements on Optoelectronic and Elastic Properties of TmCu3S4 (Tm= V, Ta, Nb)

T. Alshahrani, A. Al‐Sehemi, S. Muhammad, 2021, Optik.

Effect of Nb, Ta and V Replacements on Electronic, Optical and Elastic Properties of NbCu3Se4: A GGA+U Study

T. Alshahrani, Nawishta Jabeen, S. Muhammad, 2021 .

Band structure and effective mass of InN under pressure

J. Speck, J. Plesiewicz, J. Speck, 2008 .

Theory of free-electron optical absorption in n-GaAs

P. Pfeffer, W. Zawadzki, I. Gorczyca, 1984 .

Effect of S, Se and Te replacement on structural, optoelectronic and transport properties of SrXO4 (X= S, Se, Te) for energy applications: A first principles study

Nawishta Jabeen, S. Muhammad, Amjad Hussain, 2021, Journal of Solid State Chemistry.

Calculated defect levels in GaN and AlN and their pressure coefficients

I. Gorczyca, N. Christensen, A. Svane, 1997 .

Band gap engineering of In(Ga)N/GaN short period superlattices

T. Suski, P. Strak, I. Gorczyca, 2017, Scientific Reports.

Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

I. Gorczyca, N. Christensen, A. Svane, 2013 .

Mg-O and Mg-V N defect complexes in cubic GaN

I. Gorczyca, N. Christensen, A. Svane, 2000 .

Atomic-orbital interpretation of electronic structure of III-V semiconductors: GaAs versus AlAs

I. Gorczyca, P. Bogusławski, 1994 .

Theoretical study of nitride short period superlattices

T. Suski, I. Gorczyca, N. Christensen, 2017, Journal of physics. Condensed matter : an Institute of Physics journal.

Pressure Dependence of the Light Emission in Zinc-Blende InGaAs/GaAs and InGaN/GaN Quantum Wells

I. Gorczyca, S. P. Łepkowski, 2009 .

Pressure and composition dependence of the electron effective mass in GaAs1–xNx

I. Gorczyca, N. Christensen, A. Svane, 2006 .

Calculation of the Effect of Hydrostatic Pressure on the Band Structure of GaP and GaSb

I. Gorczyca, 1984 .

Effect of Hydrostatic Pressure on the Band Structure of InSb A Pseudopotential Calculation

I. Gorczyca, 1982 .

Theoretical studies of semiconductors, with and without defects, under pressure

I. Gorczyca, N. Christensen, A. Svane, 2003 .

Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures

S. Denbaars, S. Lepkowski, J. Massies, 2001 .

Pseudopotential and k.p band parameters for GaAs, InP and InSb

P. Pfeffer, W. Zawadzki, I. Gorczyca, 1991 .

Concentration dependent mobility of two-dimensional electron gas in GaAs/AlGaAs heterostructure

K. Ploog, C. Skierbiszewski, T. Suski, 1991 .

Spin‐Dependent Wave Functions and Band Parameters at the r Point of InSb

I. Gorczyca, 1977 .

Study of structural, optoelectronic and magnetic properties of Half-Heusler compounds QEuPa (Q= Ba, be, Mg, Sr) using first-principles method

M. Irfan, S. Muhammad, I. Gorczyca, 2021, Journal of Solid State Chemistry.

Electronic and optical properties of III‐nitrides under pressure

T. Kotani, M. Schilfgaarde, R. Laskowski, 2009 .

The electron effective mass at the bottom of the GaNAs conduction band

J. Łusakowski, C. Skierbiszewski, J. Borysiuk, 2004 .

Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

T. Suski, I. Gorczyca, N. Christensen, 2012 .

Influence of strain and internal electric fields on band gaps in short period nitride based superlattices

T. Suski, I. Gorczyca, N. Christensen, 2015 .

InN/GaN Superlattices: Band Structures and Their Pressure Dependence

T. Moustakas, T. Suski, Xinqiang Wang, 2013 .

Photoluminescence and pressure effects in short period InN/nGaN superlattices

Xiaodong Wang, T. Moustakas, T. Suski, 2013 .

Hydrostatic pressure and strain effects in short period InN/GaN superlattices

T. Suski, I. Gorczyca, N. Christensen, 2012 .

Electronic structure and effective masses of InN under pressure

J. Speck, J. Plesiewicz, T. Suski, 2008 .

Native defects and carbon impurity in cubic BN

I. Gorczyca, N. Christensen, A. Svane, 1998 .

Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure

W. Schaff, A. Kamińska, A. Suchocki, 2007 .

Transverse effective charge and its pressure dependence in GaN single crystals

E. Haller, J. Ager, E. Weber, 1999 .

Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects

I. Gorczyca, N. Christensen, A. Svane, 1999 .

First-principles calculations to investigate electronic, optical, and thermoelectric properties of Na2GeX3 (X = S, Se, Te) for energy applications

M. Irfan, S. Muhammad, Jongwan Jung, 2023, Materials Science in Semiconductor Processing.

Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

I. Gorczyca, Niels Egede Christensen, Axel Svane, 2010 .

Scattering on Short‐Range Potentials in InSb. A Pseudopotential Calculation

I. Gorczyca, 1981 .

Spin dependent wave functions at some points of the brillouin zone of InSb

I. Gorczyca, 1979 .

Calculation of the Impurity Levels in Semiconductors by the Effective-Mass-Pseudopotential Method with Fitting Parameters

I. Gorczyca, 1986 .

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells

R. Kudrawiec, M. Baranowski, P. Perlin, 2020, Scientific Reports.

Structural and electronic properties of wurtzite MgZnO and BeMgZnO alloys and their thermodynamic stability

T. Suski, H. Teisseyre, I. Gorczyca, 2016 .

High pressure phase transition in aluminium nitride

M. Boćkowski, P. Perlin, I. Grzegory, 1991 .

Editorial Note:Ab initiostudy of elastic constants in InxGa1−xN and InxAl1−xN wurtzite alloys [Phys. Rev. B83, 203201 (2011)]

I. Gorczyca, S. P. Łepkowski, 2011 .

Ab initio study of elastic constants in In x Ga 1-x N and In x Al 1-x N wurtzite alloys

I. Gorczyca, S. P. Łepkowski, 2011 .

Band structure and heterojunctions of II–VI materials

M. Cardona, I. Gorczyca, N. Christensen, 1990 .

Bowing of the band gap pressure coefficient in InxGa1−xN alloys

A. Yoshikawa, A. Kamińska, T. Suski, 2008 .

First‐Principles Calculation of Bandgaps of Al1−xInxN Alloys and Short‐Period Al1−xInxN/Al1−yInyN Superlattices

M. Wierzbowska, Y. Kangawa, T. Akiyama, 2020, physica status solidi (b).

Gap bowing in InxGa1-xN and InxAl1-xN under pressure

T. Suski, I. Gorczyca, N. Christensen, 2009 .

Poisson Ratio and Biaxial Relaxation Coefficient in In_{x}Ga_{1-x}N and In_{x}Al_{1-x}N Alloys

I. Gorczyca, S. P. Łepkowski, 2011 .

Electronic band structure of InxGa1-xN under pressure

R. Nieminen, I. Gorczyca, N. Christensen, 2007 .

Pressure behavior of beryllium-acceptor level in gallium nitride

F. Naranjo, E. Calleja, H. Teisseyre, 2005 .

Comparison of wurtzite GaN/AlN and ZnO/MgO short‐period superlattices: Calculation of band gaps and built‐in electric field

T. Suski, H. Teisseyre, I. Gorczyca, 2017 .

Elastic properties of InGaN and InAlN from first-principles calculations

I. Gorczyca, S. P. Łepkowski, 2013 .

INFLUENCE OF CHEMISTRY ON THE ENERGY BAND STRUCTURE: AlAs VERSUS GaAs

I. Gorczyca, P. Bogusławski, 1991 .

In-clustering induced anomalous behavior of band gap in InAlN and InGaN

T. Suski, I. Gorczyca, N. Christensen, 2010 .

Theoretical study of the electronic and optical properties of ZnO/MgO rock salt superlattices

H. Teisseyre, I. Gorczyca, Paweł Masiak, 2023, Micro and Nanostructures.

Anisotropy of atomic bonds formed by p-type dopants in bulk GaN crystals

R. Cortès, T. Suski, I. Grzegory, 2002 .