A. Feduniewicz-Żmuda

发表

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

M. Albrecht, R. Kucharski, P. Perlin, 2014 .

Optically pumped GaN∕AlGaN separate-confinement heterostructure laser grown along the (112¯0) nonpolar direction

P. Perlin, M. Kryśko, C. Skierbiszewski, 2007 .

InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE

Z. Wasilewski, J. Smalc-Koziorowska, C. Skierbiszewski, 2009 .

Electrically pumped blue laser diodes with nanoporous bottom cladding

C. Skierbiszewski, G. Muzioł, H. Turski, 2022, Optics Express.

Stack of two III-nitride laser diodes interconnected by a tunnel junction.

S. Stanczyk, G. Muzioł, H. Turski, 2019, Optics express.

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

K. Sobczak, P. Perlin, E. Grzanka, 2015 .

Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells

F. Julien, J. Misiewicz, R. Kudrawiec, 2008 .

InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy.

Z. Wasilewski, P. Perlin, C. Skierbiszewski, 2011 .

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Z. R. Wasilewski, P. Wiśniewski, Piotr Perlin, 2012 .

Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy.

Z. R. Wasilewski, Marcin Siekacz, Izabella Grzegory, 2008 .

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

C. Skierbiszewski, G. Muzioł, H. Turski, 2021, Materials.

Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

C. Skierbiszewski, J. Kelly, G. Muzioł, 2022, Acta Materialia.

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

F. Julien, J. Misiewicz, M. Tchernycheva, 2010 .

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

J. Smalc-Koziorowska, C. Skierbiszewski, S. Grzanka, 2022, 2206.10296.

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching.

C. Skierbiszewski, G. Muzioł, H. Turski, 2020, Nanoscale.

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

P. Perlin, M. Kryśko, C. Skierbiszewski, 2008 .

Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays.

W. Knap, D. Coquillat, M. Sypek, 2016, Optics express.

Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

J. Smalc-Koziorowska, C. Skierbiszewski, H. Turski, 2021, Crystal Growth & Design.

Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE

J. Smalc-Koziorowska, C. Skierbiszewski, A. Reszka, 2019, Journal of Crystal Growth.

Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

D. Jena, H. Xing, C. Skierbiszewski, 2019, Applied Surface Science.

60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy

P. Perlin, Grzegorz Nowak, Marcin Siekacz, 2006 .

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

J. Smalc-Koziorowska, C. Skierbiszewski, S. Stanczyk, 2020 .

Fabrication of GaN-air channels for embedded photonic structures

F. Tuomisto, E. Grzanka, R. Czernecki, 2023, Materials Science in Semiconductor Processing.

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

M. Albrecht, E. Grzanka, C. Skierbiszewski, 2019, Superlattices and Microstructures.

Indium incorporation in semipolar (20 2 ̅ 1) and nonpolar (10 1 ̅ 0) InGaN grown by plasma assisted molecular beam epitaxy

M. Kryśko, C. Skierbiszewski, G. Muzioł, 2017 .

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

P. Perlin, E. Grzanka, J. Smalc-Koziorowska, 2019, Materials Science in Semiconductor Processing.

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

C. Skierbiszewski, G. Muzioł, H. Turski, 2018 .

Tunnel Junctions with a Doped ( In,Ga)N Quantum Well for Vertical Integration of III -Nitride Optoelectronic Devices

G. Muzioł, H. Turski, A. Feduniewicz-Żmuda, 2021 .

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxya)

M. Kryśko, C. Skierbiszewski, I. Grzegory, 2011 .

Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy

E. Calleja, Ž. Gačević, J. Smalc-Koziorowska, 2020 .

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBEa)

Z. R. Wasilewski, Piotr Perlin, Robert Kucharski, 2012 .

Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

P. Perlin, M. Kryśko, C. Skierbiszewski, 2007 .

Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

Z. Wasilewski, P. Perlin, C. Skierbiszewski, 2007 .

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

Piotr Perlin, Henryk Turski, Marcin Siekacz, 2018 .

MBE of III-Nitride Heterostructures for Optoelectronic Devices

C. Skierbiszewski, G. Muzioł, H. Turski, 2019, Molecular Beam Epitaxy.