K. Tasai

High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm

M. Ikeda, K. Katayama, M. Ueno, 2012 .

InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer

A. Yamaguchi, Y. Kudo, K. Tasai, 2019, Japanese Journal of Applied Physics.

Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates

Y. Sawafuji, K. Kishino, H. Nakajima, 2009 .

First photopumped yellow–green lasing operation of BeZnSeTe/(MgSe/BeZnTe) doublehetero structures (DHs) grown on InP substrates

K. Kishino, H. Nakajima, K. Tasai, 2009 .

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar {2021} GaN Substrates

Hiroshi Nakajima, Masao Ikeda, Masahiro Adachi, 2012 .

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

Hiroshi Nakajima, Haruhiko Kuwatsuka, Hiroshi Ishikawa, 2010 .

540-nm green room-temperature CW operation of BeZnCdSe single quantum well laser diode

S. Tsuji, H. Ishikawa, S. Tanaka, 2010, 22nd IEEE International Semiconductor Laser Conference.

Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at sub-6 GHz

S. Wada, K. Yanashima, K. Tasai, 2023, 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023.