K. Naganuma

High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm

M. Ikeda, K. Katayama, M. Ueno, 2012 .

Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

M. Ikeda, H. Kawai, F. Nakamura, 1998 .

Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

M. Ikeda, Y. Hoshina, K. Naganuma, 2003 .

Characteristics of red-emitting broad area stripe laser diodes with zinc diffused window structures

Hiroyuki Uchida, Shoji Hirata, Satoshi Ito, 2010, LASE.

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar {2021} GaN Substrates

Hiroshi Nakajima, Masao Ikeda, Masahiro Adachi, 2012 .

Second- and third-order dispersion compensation using a high resolution arrayed-waveguide grating

K. Okamoto, H. Tsuda, H. Takenouchi, 1998, 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).