H. Tsuji

Crystal growth of GaN by ammonothermal method

K. Oshima, A. Yoshikawa, T. Fukuda, 2004 .

Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition

Heiji Watanabe, Y. Terao, H. Tsuji, 2018, Materials Science Forum.

Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2018, Applied Physics Express.

Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2018, Japanese Journal of Applied Physics.

Direct nitridation of 4H-SiC(0001) surface by H2/N2 treatment

H. Tsuchida, K. Murata, T. Fujii, 2020, Applied Physics Express.