P. Kempisty

发表

High pressure–high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport

M. Boćkowski, I. Grzegory, S. Krukowski, 2007 .

On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices

L. Marcinkowski, S. Krukowski, P. Strak, 2016, ETNA - Electronic Transactions on Numerical Analysis.

Mass flow and reaction analysis of the growth of GaN by HVPE

M. Boćkowski, I. Grzegory, S. Krukowski, 2006 .

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

P. Perlin, J. Plesiewicz, E. Grzanka, 2014 .

Chemical inactivity of GaN(0001) surface – The role of oxygen adsorption – Ab initio picture

S. Krukowski, P. Strak, P. Kempisty, 2019, Materials Science in Semiconductor Processing.

Homoepitaxial growth of HVPE-GaN doped with Si

M. Boćkowski, J. Smalc-Koziorowska, I. Grzegory, 2016 .

Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data

S. Krukowski, P. Kempisty, 2014, 1405.6309.

Phase-amplitude functional theory -- new ab initio calculation method for large size systems

S. Krukowski, P. Strak, P. Kempisty, 2019, 1910.04011.

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system

M. Leszczyński, P. Kempisty, M. Sznajder, 2022, New Journal of Physics.

Density functional theory determination of structural and electronic properties of struvite.

Z. Romanowski, S. Krukowski, P. Kempisty, 2010, The journal of physical chemistry. A.

Macrosteps dynamics and the growth of crystals and epitaxial layers

I. Grzegory, S. Krukowski, P. Strak, 2022, Progress in Crystal Growth and Characterization of Materials.

Optical properties of polar and nonpolar GaN/AlN multiquantum well systems—DFT study

S. Krukowski, P. Strak, P. Kempisty, 2022, Journal of Applied Physics.

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

L. Konczewicz, C. Skierbiszewski, A. Reszka, 2022, Materials.

Al coverage of AlN(0001) surface and Al vapor pressure – Thermodynamic assessment based on ab initio calculations

Y. Kangawa, S. Krukowski, G. Nowak, 2022, Computational Materials Science.

Ab initio and thermodynamic picture of Al adsorption of AlN(0001) surface – Role of bond creation and electron transition contributions

Y. Kangawa, S. Krukowski, P. Strak, 2020 .

Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab initio approach

S. Krukowski, P. Strak, P. Kempisty, 2015 .

Electronic and structural properties of Bi2Se3:Cu

K. Sobczak, A. Wołoś, J. Borysiuk, 2018 .

Ab initio determination of electron affinity of polar nitride surfaces, clean and under Cs coverage

S. Krukowski, P. Strak, P. Kempisty, 2017 .

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

K. Shiraishi, H. Amano, Y. Kangawa, 2021 .

Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

S. Krukowski, P. Strak, P. Kempisty, 2015 .

DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture

S. Krukowski, P. Strak, P. Kempisty, 2014 .

Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: A new effect associated with the Fermi level position

S. Krukowski, P. Strak, P. Kempisty, 2014 .

General aspects of the vapor growth of semiconductor crystals – A study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

S. Krukowski, P. Strak, P. Kempisty, 2013, 1311.5239.

Density Functional Theory (DFT) Simulations and Polarization Analysis of the Electric Field in InN/GaN Multiple Quantum Wells (MQWs)

Z. Romanowski, S. Krukowski, P. Strak, 2010 .

Polarization Doping in a GaN-InN System—Ab Initio Simulation

E. Monroy, Y. Kangawa, Z. Zytkiewicz, 2023, Materials.

Polarization Doping - Ab Initio Verification of the Concept: Charge Conservation and Locality

E. Monroy, Y. Kangawa, Z. Zytkiewicz, 2021, SSRN Electronic Journal.

Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures

E. Monroy, K. Korona, K. Sobczak, 2017 .

Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces

S. Krukowski, P. Strak, P. Kempisty, 2014 .

Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations

S. Krukowski, P. Strak, P. Kempisty, 2013, 1306.2631.

Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models

S. Krukowski, P. Kempisty, Pawel Strkak, 2013, 1302.2211.

Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE)

S. Krukowski, P. Strak, P. Kempisty, 2011 .

Review: GaN growth by ammonia based methods – density functional theory study

S. Krukowski, P. Strak, P. Kempisty, 2009 .

Ab initio studies of electronic properties of bare GaN(0001) surface

S. Krukowski, P. Strak, P. Kempisty, 2009 .

Principal physical properties of GaN/AlN multiquantum well systems determined by density functional theory calculations

S. Krukowski, P. Strak, P. Kempisty, 2013 .

Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface.

Y. Kangawa, S. Krukowski, P. Strak, 2017, Physical chemistry chemical physics : PCCP.

Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy

K. Shiraishi, A. Koukitu, Y. Kangawa, 2016 .

Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach

A. Koukitu, Y. Kangawa, H. Murakami, 2021 .

Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy

K. Shiraishi, Y. Kumagai, A. Koukitu, 2017 .

Evolution of the free energy of the GaN(0001) surface based on first-principles phonon calculations

Y. Kangawa, P. Kempisty, 2019, Physical Review B.

Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface

J. Misiewicz, R. Kudrawiec, Ł. Janicki, 2017 .

CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films

Y. Kangawa, P. Kempisty, M. V. von Spakovsky, 2019, Materials.

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

K. Shiraishi, M. Boćkowski, H. Amano, 2017 .

Doping effects in InN/GaN short-period quantum well structures—Theoretical studies based on density functional methods

S. Krukowski, P. Strak, P. Kempisty, 2014 .

Investigation of beryllium diffusion in HVPE-GaN grown in [11–20] and [10-10] crystallographic directions

M. Boćkowski, M. Turek, R. Jakieła, 2021, Materials Science in Semiconductor Processing.

Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

M. Boćkowski, M. Amilusik, T. Sochacki, 2020 .

Catalytic Synthesis of Nitric Monoxide at the AlN(0001) Surface: Ab Initio Analysis

I. Grzegory, S. Krukowski, P. Strak, 2019, The Journal of Physical Chemistry C.

Adsorption of N2 and H2 at AlN(0001) Surface: Ab Initio Assessment of the Initial Stage of Ammonia Catalytic Synthesis

I. Grzegory, S. Krukowski, P. Strak, 2018, The Journal of Physical Chemistry C.

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study

E. Grzanka, M. Leszczyński, P. Kempisty, 2022, Materials.

Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface

S. Krukowski, P. Kempisty, 2012 .

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

E. Monroy, S. Kryvyi, I. Grzegory, 2021, Materials.

Discretization of the Drift-Diffusion Equations with the Composite Discontinuous Galerkin Method

Leszek Marcinkowski, Konrad Sakowski, Pawel Strak, 2015, PPAM.

CFD and reaction computational analysis of the growth of GaN by HVPE method

M. Boćkowski, I. Grzegory, S. Krukowski, 2006 .

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

E. Grzanka, M. Leszczyński, P. Kempisty, 2021 .

Electrostatic condition for the termination of the opposite face of the slab in density functional theory simulations of semiconductor surfaces

S. Krukowski, P. Strak, P. Kempisty, 2009 .

Crystal growth of GaN on (0 0 0 1) face by HVPE: Ab initio simulations

S. Krukowski, P. Kempisty, 2008 .

Thermodynamics of GaN(s)-NH 3 (v)+N 2 (v)+H 2 (v) system – Electronic aspects of the processes at GaN(0001) surface

S. Krukowski, P. Strak, P. Kempisty, 2017 .

Adsorption of ammonia on hydrogen covered GaN(0001) surface – Density Functional Theory study

S. Krukowski, P. Strak, P. Kempisty, 2014 .

On the nature of Surface States Stark Effect at clean GaN(0001) surface

S. Krukowski, P. Kempisty, 2012, 1205.6724.

Erratum to “Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE)” [Surf. Sci. 605 (2011) 695-713]

S. Krukowski, P. Strak, P. Kempisty, 2012 .

Review: GaN growth by ammonia based methods – density functional theory study

S. Krukowski, P. Strak, P. Kempisty, 2009 .

Thermodynamic and kinetic approach in density functional theory studies of microscopic structure of GaN(0001) surface in ammonia-rich conditions.

A. Jalbout, S. Krukowski, P. Kempisty, 2008, The Journal of chemical physics.

Modelling the growth of nitrides in ammonia‐rich environment

M. Boćkowski, R. Czernecki, T. Suski, 2007 .

Dissipation of the excess energy of the adsorbate-thermalization via electron transfer.

S. Krukowski, P. Strak, P. Kempisty, 2016, Physical chemistry chemical physics : PCCP.