Natalia Fiuczek

Electrically pumped blue laser diodes with nanoporous bottom cladding

C. Skierbiszewski, G. Muzioł, H. Turski, 2022, Optics Express.

Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

C. Skierbiszewski, J. Kelly, G. Muzioł, 2022, Acta Materialia.

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching.

C. Skierbiszewski, G. Muzioł, H. Turski, 2020, Nanoscale.

Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

J. Smalc-Koziorowska, C. Skierbiszewski, H. Turski, 2021, Crystal Growth & Design.

Fabrication of GaN-air channels for embedded photonic structures

F. Tuomisto, E. Grzanka, R. Czernecki, 2023, Materials Science in Semiconductor Processing.

Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy

E. Calleja, Ž. Gačević, J. Smalc-Koziorowska, 2020 .