P. Chen

发表

Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region.

Z. Liu, J. Zhu, D. Jiang, 2017, Optics express.

Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold.

Z. Liu, J. Zhang, J. Zhu, 2017, Applied optics.

Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.

Z. Liu, J. P. Liu, H. Yang, 2015, Optics express.

Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes

Z. Liu, H. Yang, J. Zhu, 2017, Scientific Reports.

XPS study of impurities in Si‐doped AlN film

Z. Liu, J. P. Liu, J. Zhu, 2016 .

Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

Z. Liu, J. P. Liu, H. Yang, 2016 .

Differential resistance of GaN-based laser diodes with and without polarization effect.

Z. Liu, J. Zhu, D. Jiang, 2015, Applied optics.

The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

Mo Li, Z. Liu, D. Jiang, 2018, Optical Materials.

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

Z. Liu, J. Zhu, D. Jiang, 2013 .

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

Mo Li, Z. Liu, W. Wang, 2018, AIP Advances.

The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN‐based multiple quantum well laser diodes

Z. Liu, J. P. Liu, H. Yang, 2015 .

Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer

Mo Li, Z. Liu, Wenzhu Liu, 2019, Optics & Laser Technology.

Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes

D. Jiang, F. Liang, Y. Xing, 2020 .

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers

Z. Liu, F. Liang, J. Yang, 2021, Journal of Applied Physics.

The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content

Z. Liu, J. P. Liu, D. Jiang, 2016 .

Enhancing the performance of InGaN/GaN multiple quantum well blue laser diodes by suppressing the overflow of holes

Z. Liu, Dongshan Zhao, D. Jiang, 2018, Superlattices and Microstructures.

Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes

Z. Liu, D. Jiang, Y. Xing, 2019, Applied Physics B.

Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies

Z. Liu, J. Yang, P. Chen, 2021 .

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.

Z. Liu, J. P. Liu, H. Yang, 2016, Optics express.

Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations

Mo Li, Wenzhu Liu, D. Jiang, 2018, Optical Materials.