V. Kirchner

发表

Strain relaxation in AlGaN under tensile plane stress

S. Einfeldt, S. Figge, D. Hommel, 2000 .

The growth of size-determined Cu clusters in nanometer holes on Au(111) due to a balance between surface and electrochemical energy

G. Ertl, X. Xia, V. Kirchner, 1999 .

Electrochemical micromachining with ultrashort voltage pulses–a versatile method with lithographical precision

Matthias Kock, Rolf Schuster, V. Kirchner, 2003 .

INCORPORATION OF INDIUM DURING MOLECULAR BEAM EPITAXY OF INGAN

P. Ryder, S. Einfeldt, S. Figge, 1998 .

Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

P. Ryder, S. Einfeldt, D. Hommel, 1999 .

Evaluation of ZnO substrates for homoepitaxy

Y. Chen, T. Yao, H. Ko, 2001 .

Polytypism in epitaxially grown gallium nitride

P. Ryder, S. Einfeldt, D. Hommel, 2000 .

Analysis of the Defect Structure of Epitaxial GaN

S. Einfeldt, D. Hommel, V. Kirchner, 1999 .

MBE Growth of GaN on NdGaO3 (101)

J. Baranowski, S. Einfeldt, D. Hommel, 1997 .

Thermally Induced Strain in ZnSe and GaN Epitaxial Layers Studied by High‐Resolution X‐Ray Diffraction at Variable Temperatures

D. Hommel, V. Kirchner, V. Grossmann, 2000 .

X-ray scattering from GaN epitaxial layers: An example of highly anisotropic coherence

S. Einfeldt, D. Hommel, V. Kirchner, 2001 .

ION-INDUCED CRYSTAL DAMAGE DURING PLASMA-ASSISTED MBE GROWTH OF GAN LAYERS

P. Ryder, S. Einfeldt, D. Hommel, 1998 .

Electrochemical Micromachining of Stainless Steel by Ultrashort Voltage Pulses

Heinz Kück, Gerhard Ertl, Matthias Kock, 2003 .

Electrochemical micromachining of p-type silicon

P. Allongue, P. Jiang, V. Kirchner, 2004 .

Electrochemical machining of stainless steel microelements with ultrashort voltage pulses

Gerhard Ertl, Rolf Schuster, G. Ertl, 2001 .

Electrochemical nanostructuring with ultrashort voltage pulses.

X. Xia, V. Kirchner, R. Schuster, 2001, Accounts of chemical research.

Strain relaxation in AlGaN/GaN superlattices grown on GaN

Sven Einfeldt, Detlef Hommel, Heidrun Heinke, 2001 .

X-ray diffraction analysis of the defect structure in epitaxial GaN

Sven Einfeldt, Detlef Hommel, S. Einfeldt, 2000 .

On the Impact of Microstructure on Luminescence of InGaN/GaN Multi Quantum Wells Grown by Molecular Beam Epitaxy

S. Einfeldt, S. Figge, D. Hommel, 1999 .

Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy

P. Ryder, S. Einfeldt, S. Figge, 1999 .

Thermally induced strain in MBE grown GaN layers

S. Einfeldt, D. Hommel, V. Kirchner, 1998 .

Polarity dependence and characterization of high-quality homoepitaxial ZnO layers grown on {0001} ZnO substrates

T. Yao, H. Ko, V. Kirchner, 2000, COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices.