H. Heinke

发表

Strain relaxation in AlGaN under tensile plane stress

S. Einfeldt, S. Figge, D. Hommel, 2000 .

On the Way to the IIVI Quantum Dot VCSEL

G. Alexe, P. Michler, D. Hommel, 2002 .

Growth and characterization of II–VI semiconductor lasers

D. Hommel, K. Ohkawa, H. Heinke, 1999 .

INCORPORATION OF INDIUM DURING MOLECULAR BEAM EPITAXY OF INGAN

P. Ryder, S. Einfeldt, S. Figge, 1998 .

Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

P. Ryder, S. Einfeldt, D. Hommel, 1999 .

Halogen doping of II-VI semiconductors during molecular beam epitaxy

A. Waag, G. Bilger, F. Fischer, 1994 .

p‐type doping of CdTe with a nitrogen plasma source

A. Waag, U. Zehnder, H. Lugauer, 1996 .

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

S. Einfeldt, S. Figge, D. Hommel, 2003 .

Mosaicity of GaN Epitaxial Layers: Simulation and Experiment

S. Figge, D. Hommel, T. Böttcher, 2001 .

Polytypism in epitaxially grown gallium nitride

P. Ryder, S. Einfeldt, D. Hommel, 2000 .

GaN based laser diodes – epitaxial growth and device fabrication

Marc Ilegems, Sven Einfeldt, Detlef Hommel, 2003 .

Strain in cracked AlGaN layers

R. Davis, S. Einfeldt, D. Hommel, 2002 .

Analysis of the Defect Structure of Epitaxial GaN

S. Einfeldt, D. Hommel, V. Kirchner, 1999 .

Quantum dot formation by segregation enhanced CdSe reorganization

A. Forchel, D. Gerthsen, G. Bacher, 2002 .

High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices

G. Alexe, D. Hommel, C. Kruse, 2002 .

500–560 nm Laser Emission from Quaternary CdZnSSe Quantum Wells

G. Alexe, D. Hommel, C. Kruse, 2002 .

Influence of capping conditions on CdSe/ZnSe quantum dot formation

A. Forchel, G. Bacher, D. Hommel, 2002 .

Electro‐Optical Characterization of CdSe Quantum Dot Laser Diodes

D. Hommel, H. Heinke, M. Klude, 2002 .

Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots

J. Falta, P. Ryder, T. Schmidt, 2001 .

Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures

J. Falta, D. Hommel, H. Heinke, 2000 .

Formation of self-assembling II–VI semiconductor nanostructures during migration enhanced epitaxy

U. Woggon, D. Hommel, K. Ohkawa, 1998 .

Wide gap Cd1-xMgxTe : molecular beam epitaxial growth and characterization

W. Ossau, A. Waag, U. Zehnder, 1994 .

Growth of MgTe and Cd1−xMgxTe thin films by molecular beam epitaxy

A. Waag, C. Becker, G. Landwehr, 1993 .

Structural properties of CdMgTe/CdTe superlattices

A. Waag, D. Gerthsen, G. Landwehr, 1994 .

Unusual strain in homoepitaxial CdTe(001) layers grown by molecular beam epitaxy

A. Waag, H. Heinke, G. Landwehr, 1994 .

Temperature-dependent measurements on ZnSe heterostructures by high-resolution X-ray diffraction

D. Hommel, H. Heinke, M. Behringer, 1998 .

Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

U. Rinas, D. Hommel, M. Prokesch, 1999 .

MBE Growth of GaN on NdGaO3 (101)

J. Baranowski, S. Einfeldt, D. Hommel, 1997 .

Structural characterization and interfacial studies of ZnSe based heterostructures on GaAs

T. Lippmann, G. Landwehr, D. Hommel, 1994 .

Impact broadening of alkali Rydberg levels in pure and mixed alkali vapours

K. Niemax, H. Heinke, K. Weber, 1983 .

Molecular beam epitaxial growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction

A. Waag, G. Landwehr, D. Hommel, 1994 .

The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe

S. Einfeldt, C. Becker, G. Landwehr, 1994 .

Optical investigation of confinement and strain effects in CdTe/(CdMg)Te quantum wells

W. Ossau, A. Waag, F. Fischer, 1993 .

Application of the model of the relaxation line in reciprocal space to II-VI heterostructures

S. Einfeldt, G. Landwehr, H. Heinke, 1995 .

Relaxation and mosaicity profiles in epitaxial layers studied by high resolution X-ray diffraction

Detlef Hommel, G. Landwehr, G. Landwehr, 1994 .

New laser sources for plastic optical fibers: ZnSe-based quantum well and quantum dot laser diodes with 560-nm emission

Gabriela Alexe, Detlef Hommel, Heidrun Heinke, 2001, International Symposium on Photonics and Applications.

CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

Kazuhiro Ohkawa, Detlef Hommel, Ulrike Woggon, 1997 .

ION-INDUCED CRYSTAL DAMAGE DURING PLASMA-ASSISTED MBE GROWTH OF GAN LAYERS

P. Ryder, S. Einfeldt, D. Hommel, 1998 .

The role of high-temperature island coalescence in the development of stresses in GaN films

James S. Speck, Sven Einfeldt, Detlef Hommel, 2001 .

Direct investigation of very thin CdSe layers on ZnSe by out-of-plane grazing incidence X-ray diffraction

G. Alexe, J. Falta, T. Schmidt, 2004 .

Plasma assisted molecular beam epitaxy growth of GaN

S. Einfeldt, D. Hommel, H. Heinke, 1997 .

The band gap of Hg1−xMgxTe grown by molecular beam epitaxy

C. Becker, G. Landwehr, H. Heinke, 1996 .

Strain relaxation in AlGaN/GaN superlattices grown on GaN

Sven Einfeldt, Detlef Hommel, Heidrun Heinke, 2001 .

A lab in the pocket

C. Stampfer, H. Heinke, S. Staacks, 2020, Nature Reviews Materials.

Molecular beam epitaxial growth and characterization of (100) HgSe on GaAs

G. Lerondel, S. Einfeldt, Y. Wu, 1993 .

Molecular beam epitaxial growth and segregation of Hg1−xZnxSe alloys

S. Einfeldt, C. Becker, G. Landwehr, 1995 .

X-ray diffraction analysis of the defect structure in epitaxial GaN

Sven Einfeldt, Detlef Hommel, S. Einfeldt, 2000 .

Simple Time-of-Flight Measurement of the Speed of Sound Using Smartphones

Christoph Stampfer, Sebastian Staacks, Simon Hutz, 2018, The Physics Teacher.

Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue—green laser diodes

M. Strassburg, D. Bimberg, D. Hommel, 1998 .

X-ray scattering from GaN epitaxial layers: An example of highly anisotropic coherence

S. Einfeldt, D. Hommel, V. Kirchner, 2001 .

On the Impact of Microstructure on Luminescence of InGaN/GaN Multi Quantum Wells Grown by Molecular Beam Epitaxy

S. Einfeldt, S. Figge, D. Hommel, 1999 .

Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy

P. Ryder, S. Einfeldt, S. Figge, 1999 .

Crystallographic wing tilt in laterally overgrown GaN

James S. Speck, Detlef Hommel, S. P. DenBaars, 2003 .

Structural properties of homoepitaxial and heteroepitaxial ZnSe-based laser structures

D. Hommel, H. Heinke, M. Behringer, 1998 .

Thermally induced strain in MBE grown GaN layers

S. Einfeldt, D. Hommel, V. Kirchner, 1998 .