J. W. Petersen

发表

Fast three-dimensional laser micromachining of silicon for microsystems

S. Bouwstra, M. Müllenborn, H. Dirac, 1996 .

Photolithography on micromachined 3D surfaces using electrodeposited photoresists

P. Kersten, J. W. Petersen, S. Boustra, 1995 .

Systematic experimental and theoretical studies of the lattice vibrations of host atoms and substitutional Sn impurities in III–V semiconductors

G. Weyer, J. W. Petersen, O. H. Nielsen, 1983 .

Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates

A. Larsen, J. L. Hansen, F. Jensen, 1998 .

Growth and characterization of compositionally graded, relaxed Si1-xGex

A. Larsen, J. L. Hansen, F. Jensen, 1994 .

Candidates for electron-neutrino mass measurements. the case of 81Kr

K. Riisager, P. Hansen, A. Rújula, 1988 .

Nanoscale Structuring by Misfit Dislocations in Si 1 − x Ge x / S i Epitaxial Systems

A. Larsen, J. L. Hansen, F. Jensen, 1997 .

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

M. Fanciulli, A. Larsen, S. Dannefaer, 2000 .

An upper limit for the mass of upsi;e from tritium β-decay

E. Holzschuh, J. W. Petersen, R. Pixley, 1986 .

Zero- and one-dimensional nanostructures on an surface

A. Larsen, F. Jensen, J. W. Petersen, 1996 .

Ordering of germanium islands in the Si1−xGexSi system pre-structured by misfit dislocations

J. L. Hansen, F. Jensen, J. W. Petersen, 1998 .

Low-dimensional structures generated by misfit dislocations in the bulk of Si1−xGex/Si heteroepitaxial systems

A. Larsen, J. L. Hansen, F. Jensen, 1997 .

Internal oxidation of sp-Impurities in silver studied by119Sn Mössbauer spectroscopy

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

The electric quadrupole hyperfine interaction at sites of ion-implanted fluorine in amorphous and crystalline silicon

I. Stensgaard, T. Lauritsen, G. Weyer, 1984 .

Mössbauer study of the formation of impurity-vacancy complexes in copper

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

A Mössbauer study of impurity-vacancy defects in copper

G. Weyer, J. W. Petersen, S. Damgaard, 1982 .

Magnetic hyperfine fields of119Sn in vacancy-associated defect structures in 3d ferromagnets

M. Søndergaard, G. Weyer, E. Danielsen, 1987 .

Radiogenic Sn-Vacancy Complexes in FCC Nickel and Cobalt

G. Weyer, K. B. Nielsen, J. W. Petersen, 1987 .

Electron-Positron-Channeling and Mössbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel

G. Weyer, S. Winter, E. Danielsen, 1987 .

Isomer shifts and force constants of substitutional 119Sn impurity atoms in FCC metals

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Radiogenic Sn defects in aluminium from implantations of 119mSn and 119Sb (Mossbauer study)

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

On the nature of cross‐hatch patterns on compositionally graded Si1−xGex alloy layers

F. Jensen, J. W. Petersen, S. Shiryaev, 1994 .

Magnetic hyperfine interaction after77Br implantation into iron

K. Lieb, J. W. Petersen, F. Raether, 1988 .

Dislocation patterning and nanostructure engineering in compositionally graded layer systems

A. Larsen, J. L. Hansen, F. Jensen, 1995 .

Internal oxidation of 5sp impurities in noble metals

G. Weyer, J. W. Petersen, S. Damgaard, 1985 .

The tin-vacancy pair defect in silicon

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

Radiogenic Defects in Semiconductors

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

The nature of radiogenic Sn defects in group-IV elements

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

Radiogenic Sn Impurity Defects in Germanium

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

Silicon nanostructures produced by laser direct etching

M. Müllenborn, H. Dirac, J. W. Petersen, 1995 .

A mössbauer-spectroscopy study of the annealing of supersaturated solutions of57Co in silicon

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Site-Selective Doping of Compound Semiconductors by Ion Implantation of Radioactive Nuclei

J. Heinemeier, G. Weyer, J. W. Petersen, 1980 .

Laser implantation of impurity atoms into silicon and gallium‐arsenide single crystals

G. Weyer, J. W. Petersen, S. Damgaard, 1981 .

Mössbauer Conversion Electron and Rutherford Backscattering Analysis of Laser-Implanted Fe and Sn in Silicon

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

Dislocation patterning — a new tool for spatial manipulation of Ge islands

Flemming Jensen, A. Larsen, J. L. Hansen, 1997 .

EFG sign for Sn in Zn, Cd, and Sb

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Defect structures of ion-implanted α-tin

G. Weyer, J. W. Petersen, S. Damgaard, 1980 .

Sn impurity defects in germanium from ion implantations of radioactive 119In

J. Heinemeier, G. Weyer, J. W. Petersen, 1980 .

Identification of band‐gap states by deep level transient spectroscopy on radioactive probes: The case of Au and Pt in silicon

J. W. Petersen, J. Nielsen, 1990 .

Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer

A. Larsen, J. W. Petersen, C. Christensen, 1999 .

119Sn Mössbauer study of the implantation behaviour of119In,119Sn,119mSn,119Sb and119mTe ions in SiC

W. J. Choyke, G. Weyer, J. W. Petersen, 1985 .

Sn-vacancy defects in GaP

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

The electronic configuration of amphoteric Sn dopants in III-V compound semiconductors

G. Weyer, J. W. Petersen, S. Damgaard, 1983 .

Sn In silicon carbide: A mossbauer and channeling study

I. Stensgaard, G. Weyer, J. W. Petersen, 1981 .

Identification of Band Gap States in Silicon by Deep Level Transient Spectroscopy on Radioactive Impurities

J. W. Petersen, J. Nielsen, 1992 .

Point defect injection into silicon due to low-temperature surface modifications

A. Larsen, J. W. Petersen, C. Christensen, 1992 .

Identification of band gap states by deep level transient spectroscopy on radioactive probes

J. W. Petersen, J. Nielsen, 1992 .

Photolithography on micromachined 3D surfaces using electrodeposited photoresists

J. W. Petersen, P. Kersten, S. Boustra, 1995 .

Cold-walled UHV/CVD batch reactor for the growth of Si1−xGex layers

O. Hansen, E. Thomsen, J. W. Petersen, 1997 .

Comparison of impurity defect structures formed by ion implantations in amorphous and crystalline silicon

J. Heinemeier, G. Weyer, J. W. Petersen, 1982 .