I. Fujimoto

发表

Chemical Bond of GaAs Revealed by Modulation X-Ray Diffraction

I. Fujimoto, 1980 .

Electric-Field-Induced Microscopic Structural Changes in LiNbO3, LiTaO3 and GaAs Revealed by Modulation X-ray Diffraction.

I. Fujimoto, 1983 .

Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles

S. Hiyamizu, I. Fujimoto, T. Takebe, 1992 .

Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

H. Katahama, I. Fujimoto, H. Seto, 1990 .

Si doping and MBE growth of GaAs on tilted (111)A substrates

H. Katahama, I. Fujimoto, H. Seto, 1991 .

Effects of Substrate Misorientation and the Growth Mechanism of Si Doped GaAs Grown on (111)A Substrate by MBE

I. Fujimoto, H. Seto, S. Nishine, 1989 .

Structural aspects of non-stoichiometry and heavy doping of GaAs

I. Fujimoto, 1992 .

Characterisation of Stoichiometry in GaAs by X-Ray Intensity Measurements of Quasi-Forbidden Reflections

I. Fujimoto, 1984 .

Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method

I. Fujimoto, 1992 .

MICROSCOPIC STRUCTURE AND COMPENSATION MECHANISM OF HEAVILY Si-DOPED GaAs GROWN ON (111)A, B AND (100) SUBSTRATES BY MOLECULAR BEAM EPITAXY

H. Katahama, K. Nakanishi, I. Fujimoto, 1990 .

Direct Detection of Electric-Field-Induced Microscopic Structural Changes in LiNbO 3 by Modulation X-Ray Diffraction

I. Fujimoto, 1978 .

Electric-Field-Induced Ionic Displacement and Redistribution of Bonding Electrons in LiNbO3 and LiTaO3 Revealed by Modulation X-ray Diffraction

I. Fujimoto, 1982 .

Pendellösung Measurement of the (222) Reflection in Silicon

I. Fujimoto, M. Fehlmann, 1975 .

New X‐Ray Topographic Technique for Detection of Small Defects in Highly Perfect Crystals

J. Chikawa, I. Fujimoto, Yuhko Asaeda, 1970 .

X‐ray topographic observation of moving dislocations in silicon crystals

T. Abe, J. Chikawa, I. Fujimoto, 1972 .

X‐RAY DIFFRACTION TOPOGRAPHY WITH A VIDICON TELEVISION IMAGE SYSTEM

J. Chikawa, I. Fujimoto, 1968 .

X‐Ray Topography with Chromatic‐Aberration Correction

J. Chikawa, I. Fujimoto, Yuhko Asaeda, 1971 .

The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs

T. Yao, I. Fujimoto, Y. Okada, 1987 .

Low temperature Laue topography of strontium titanate at SPring-8

K. Kajiwara, S. Iida, Y. Chikaura, 2003 .

Analysis of Nonstoichiometry and Doped Inpurities in GaAs by X-Ray Quasi-Forbidden Reflection (XFR) Method

I. Fujimoto, 1987 .

Characteristics of a New High-Sensitivity X-Ray Imaging Tube for Video Topography

H. Maruyama, J. Chikawa, I. Fujimoto, 1993 .

Temperature and pressure dependence of the Si(222) forbidden reflection and the vibration of the bonding charge

I. Fujimoto, 1974 .

Reduction of DX Center Concentration in Al0.3Ga0.7As with In

I. Fujimoto, Takeo Suzuki, Kikuo Kobayashi, 1989 .

Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth

H. Katahama, I. Fujimoto, H. Seto, 1989 .